Capacitance transient study of a bistable deep level in e-Irradiated n-type 4H-SiC

電子線照射したn型4H-SiC中の準安定ディープレベルの過渡キャパシタンス測定

Beyer, F. C.*; Hemmingsson, C. G.*; Pedersen, H.*; Henry, A.*; 磯谷 順一*; 森下 憲雄*; 大島 武; Janzn, E.*

Beyer, F. C.*; Hemmingsson, C. G.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi; Janzn, E.*

A bistable center, named FB center, in electron irradiated 4H-SiC was observed using capacitance transient techniques. In configuration called "", the deep level known as EH5 ( = - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration called "", no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed that the transition temperatures to be from to is more than 730K, and for the opposite process from to is about 710 K. The energy needed to conduct the transformations were determined to be ( to ) = (2.1 0.1) eV and ( to ) = (2.3 0.1) eV, respectively. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.