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表面修飾Si(001)表面上の$$alpha$$-sexithiophene超薄膜の構造

The Structure of $$alpha$$-sexithiophene ultra-thin films on passivated Si(001) surfaces

平賀 健太*; 豊島 弘明*; 大野 真也*; 平尾 法恵; 関口 哲弘  ; 下山 巖   ; 馬場 祐治  ; 向井 孝三*; 吉信 淳*; 田中 正俊*

Hiraga, Kenta*; Toyoshima, Hiroaki*; Ono, Shinya*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji; Mukai, Kozo*; Yoshinobu, Jun*; Tanaka, Masatoshi*

有機半導体分子と半導体基板表面との界面構造の特性を自在に制御する技術の確立は有機トランジスタや太陽電池の作製・実用化において重要である。本研究ではさまざまな膜厚(0.25から1.0nm)の$$alpha$$-sexithiophene($$alpha$$-6T)超薄膜を形成し、表面反射分光(RDS, SDRS)、S 1sの角度分解NEXAFS(X線吸収端微細構造)、UPSを測定した。RDS, SDRS、及びNEXAFSからは分子の配向について、一方でUPSからは配向の完全性に関する情報が得られた。表面修飾の方法や膜厚に依存した分子配向や凝集構造の相違について報告する。

It is important to control orientation structure and electric property at the interface between organic semiconductor molecule and surfaces of semiconductor substrates in order for the development of commercial base organic transistors and solar cells. In the present work, we have investigated the surface reflection spectroscopy (RDS, SRDS), S-1s angle resolved near-edge X-ray absorption fine-structure (NEXAFS), and UPS for $$alpha$$-sexithiophene ($$alpha$$-6T) ultra-thin films with a variety of thickness from 0.25 to 1.0 nm. The results of RDS and SDRS, and NEXAFS gave the information on orientation structure of the $$alpha$$-6T molecules. In contrast, UPS gave the uniformity of the thin films. We report on how orientation structures and condensed structures are changed depending on the method of passivation and the film thickness.

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