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UGa$$_2$$のGa-NQR

Ga-NQR in UGa$$_2$$

神戸 振作  ; 酒井 宏典   ; 徳永 陽  ; 芳賀 芳範   ; 山本 悦嗣  

Kambe, Shinsaku; Sakai, Hironori; Tokunaga, Yo; Haga, Yoshinori; Yamamoto, Etsuji

強磁性化合物UGa$$_2$$のゼロ磁場下でのNQR実験を行った。実験は常磁性及び強磁性相で行った。Ga核はI=3/2であるので、常磁性相ではGa-NQR共鳴線は1つになる。一方、強磁性秩序状態では、内部磁場により、共鳴線の分裂が起きる。強磁性秩序状態のスペクトルを解析し、Gaサイトでの内部磁場の温度依存を決定した。この化合物では、Ga軌道の共鳴磁気X-線散乱実験が行われており、その散乱強度の温度依存が測定されている。したがって、内部磁場と散乱強度の関係は明らかになった。Ga軌道の共鳴磁気X-線散乱強度に起源についても議論する。

The NQR experiment under the zero field of ferromagnetic compound UGa$$_2$$ was conducted. The experiment was conducted by paramagnetism and a ferromagnetic phase. Since Ga cores are I=3/2, a Ga-NQR resonance line is set to one in a paramagnetic phase. On the other hand, in the state of ferromagnetic order, division of a resonance line occurs by an internal magnetic field. The spectrum of a ferromagnetic order state was analyzed and temperature dependence of the internal magnetic field in Ga site was determined. With this compound, the resonance magnetism X-line scattering experiment of Ga orbit is conducted, and temperature dependence of that scattered intensity is measured. Therefore, the relation between an internal magnetic field and scattered intensity became clear. It argues also about the origin to the resonance magnetism X-line scattered intensity of Ga orbit.

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