A Synchrotron radiation photoelectron spectroscopic study on the oxidation of Si in diamond-like carbon film by hyperthermal O-atom beam

超熱酸素原子ビームによるダイヤモンドライクカーボン膜中のSiの酸化に関する放射光光電子分光学的研究

横田 久美子*; 田川 雅人*; 吉越 章隆 ; 寺岡 有殿

Yokota, Kumiko*; Tagawa, Masahito*; Yoshigoe, Akitaka; Teraoka, Yuden

Oxidation reaction efficiency of the embedded Si atoms in the diamond-like carbon (DLC) film was studied with a combination of the broad O-atom beam, high-speed chopper wheel and synchrotron radiation photoelectron spectroscopy (SR-PES). The high-speed chopper wheel converted the translational energy distribution of O-atom into spatial distribution on the DLC surface. High spatial and energy resolutions of SR-PES allow studying the difference in oxidation states of Si atoms in different translational energies. It was confirmed that the SiO was formed by the high-energy collision conditions of O-atoms, whereas sub-oxides are formed with the low-energy collisions. The efficiency of SiO formation at 9 eV-collision is evaluated to be 4 times greater than that at 2 eV-collision.