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Single crystal growth and characterization of URu$$_2$$Si$$_2$$

URu$$_2$$Si$$_2$$の単結晶育成と評価

芳賀 芳範   ; 松田 達磨*; 立岩 尚之   ; 山本 悦嗣  ; 大貫 惇睦; Fisk, Z.

Haga, Yoshinori; Matsuda, Tatsuma*; Tateiwa, Naoyuki; Yamamoto, Etsuji; Onuki, Yoshichika; Fisk, Z.

We review recent progress in single crystal growth and study of electronic properties in URu$$_2$$Si$$_2$$. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.

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パーセンタイル:27.43

分野:Materials Science, Multidisciplinary

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