検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Single crystal growth and characterization of URu$$_2$$Si$$_2$$

URu$$_2$$Si$$_2$$の単結晶育成と評価

芳賀 芳範 ; 松田 達磨*; 立岩 尚之  ; 山本 悦嗣 ; 大貫 惇睦; Fisk, Z.

Haga, Yoshinori; Matsuda, Tatsuma*; Tateiwa, Naoyuki; Yamamoto, Etsuji; Onuki, Yoshichika; Fisk, Z.

We review recent progress in single crystal growth and study of electronic properties in URu$$_2$$Si$$_2$$. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.

Access

:

- Accesses

InCites™

:

パーセンタイル:32.87

分野:Materials Science, Multidisciplinary

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.