R&D for introducing silicon carbide materials to safety improvement of BWR's core, 5; Influence of steam flow rate on oxidation of SiC at high temperatures

Pham, V. H.   ; 永江 勇二 ; 倉田 正輝 ; 石橋 良*; 山下 真一郎   

Pham, V. H.; Nagae, Yuji; Kurata, Masaki; Ishibashi, Ryo*; Yamashita, Shinichiro

In this study, oxidation of SiC under various flow rates of steam was investigated at 1400C using laser heating. Results of the investigation indicated that the mass evolution of SiC underwent a mass gain with 0.1 g/min of steam flow rate. Whereas, the mass evolution experienced a mass loss with 3 g/min of steam. Based on the data of mass change under the investigated conditions, the parabolic and linear rate constants were calculated and reported.