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Epitaxial thin film growth of europium dihydride

小松 遊矢*; 清水 亮太*; Wilde, M.*; 小林 成*; 笹原 悠輝*; 西尾 和記*; 重松 圭*; 大友 明*; 福谷 克之; 一杉 太郎*

Komatsu, Yuya*; Shimizu, Ryota*; Wilde, M.*; Kobayashi, Shigeru*; Sasahara, Yuki*; Nishio, Kazunori*; Shigematsu, Kei*; Otomo, Akira*; Fukutani, Katsuyuki; Hitosugi, Taro*

This paper reports the epitaxial growth of EuH$$_{2}$$ thin films with an $$omega$$-scan full width at half-maximum of 0.07$$^{circ}$$, the smallest value for metal hydride thin films reported so far. The thin films were deposited on yttria-stabilized ZrO$$_{2}$$ (111) substrates using reactive magnetron sputtering. The magnetization measurement showed that the saturation magnetization is $$sim$$7 $$mu_{B}$$/Eu atom, indicating that the EuH$$_{x}$$ films are nearly stoichiometric (x $$approx$$ 2.0) and that the Curie temperature is $$sim$$20 K. The optical measurements showed a bandgap of $$sim$$1.81 eV. These values are similar to those previously reported for bulk EuH$$_{2}$$. This study paves the way for the application of metal hydrides in the field of electronics through the fabrication of high-quality metal hydride epitaxial thin films.

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