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Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; 藤川 誠司*; 神津 美和; 高橋 正光
Surface Science, 606(17-18), p.1458 - 1461, 2012/09
被引用回数:1 パーセンタイル:4.96(Chemistry, Physical)The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a pattern is observed which changes to the pattern at high temperature. In contrast to the GaSb(111)A surface the observed structure is not stabilized by configurational entropy.
Tinkham, B. P.*; Romanyuk, O.*; Braun, W.*; Ploog, K. H.*; Grosse, F.*; 高橋 正光; 海津 利行*; 水木 純一郎
Journal of Electronic Materials, 37(12), p.1793 - 1798, 2008/12
被引用回数:4 パーセンタイル:30.83(Engineering, Electrical & Electronic)Surface X-ray diffraction was employed, , to measure the GaSb(001)-(15) and (13) surface phases under technologically relevant growth conditions. We measured a large set of fractional-order in-plane diffraction peaks arising from the superstructure of the surface reconstruction. For the (13) phase we obtained good agreement between our data and the (43) model proposed in recent experimental and theoretical work. Our measurements on the Sb-rich (15) phase provide evidence that the structure under growth conditions is, in fact, different from that of the models previously suggested on the basis of scanning tunneling microscopy (STM). We discuss reasons for this discrepancy as well as the identified structural elements for these reconstructions, which include surface relaxations and subsurface rearrangement.
Tinkham, B. P.*; Braun, W.*; Ploog, K. H.*; 高橋 正光; 水木 純一郎; Grosse, F.*
Journal of Vacuum Science and Technology B, 26(4), p.1516 - 1520, 2008/07
被引用回数:3 パーセンタイル:26.05(Engineering, Electrical & Electronic)Surface X-ray diffraction has been employed, in situ, to measure InAs(001)-(24) surface phases under technologically relevant growth conditions. For the As-rich (24) phase, the authors obtain good agreement between the data and the 2(24) surface reconstruction model. Comparison of our measurements on the (24) phase measured close to the metal-rich phase transition to models from density functional theory suggests a mixture of 2(24) and 2(24) surface structures present on the surface.
Tinkham, B. P.*; 高橋 正光; Jenichen, B.*; 綿引 達郎*; Braun, W.*; Ploog, K. H.*
Semiconductor Science and Technology, 21(12), p.1552 - 1556, 2006/12
被引用回数:6 パーセンタイル:37.24(Engineering, Electrical & Electronic)微小角入射X線回折とX線反射率法とを用いて、Si(001)上にエピタキシャル成長したPrO膜の構造を調べた。CMOS製造プロセスに関係する成長中・成長後・アニールの各過程での構造について報告する。高温蒸着源を用い、1970CでPrOをPrOに変換しつつ蒸着させた。蒸着直後の膜には、PrOの二つの相と、Si界面に生成した珪酸化物の層が認められた。立方晶PrOは、単結晶として成長し、多結晶の六方晶PrOよりも量的には多かった。膜の結晶構造は800Cまでのアニールに対して安定で、800Cでは、PrOが減って珪酸化物が増加した。