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-FeSi
film on Si(100)山口 憲司; 濱本 悟*; 北條 喜一
Physica Status Solidi (C), 10(12), p.1699 - 1703, 2013/12
被引用回数：0 パーセンタイル：0.01シリサイド系半導体の代表格である-FeSiに対して、筆者らはスパッタ洗浄による基板前処理を併用したイオンビームスパッタ蒸着法によって、高配向した-FeSi薄膜の作製に成功している。しかし、最近、成膜温度によって高配向膜が得られる基板前処理条件が異なることがわかった。このことは、基板処理後加熱アニールを行っているとはいえ、スパッタ中に導入された照射欠陥が、少量ながらもシリサイド生成反応に影響を与えていることを示している。本研究では、-FeSi薄膜の配向性に対するスパッタ洗浄時のNe
イオンフルエンスに対する依存性を詳細に調べ、薄膜の成長過程における照射欠陥の役割を検討した。
Mn
Si/Ge(111) heteroepitaxial interfaces野口 雄也*; 平田 智昭*; 川久保 雄基*; 鳴海 一雅; 境 誠司; 前田 佳均
Physica Status Solidi (C), 10(12), p.1732 - 1734, 2013/12
被引用回数：0 パーセンタイル：0.01We have investigated thermal disordering and instability of Fe
MnSi (FMS) (111)/Ge(111) heterointerfaces by Rutherford-backscattering spectrometry (RBS), and found pronounced degradation of axial orientation which appears as increase of the minimum yield of RBS when the FMS samples are annealed above 300
C. Analysis of interdiffusion at the heterointerface reveals that the disordering mainly comes from interdiffusion between Fe and Ge atoms. This situation is the same as that observed in off-stoichiometric Fe
Si, 
, Fe
Si, but far from that in stoichiometric FeSi.
(Mn
Fe)Si(111) epitaxially grown on Ge(111)川久保 雄基*; 野口 雄也*; 平田 智昭*; 鳴海 一雅; 境 誠司; 山田 晋也*; 浜屋 宏平*; 宮尾 正信*; 前田 佳均
Physica Status Solidi (C), 10(12), p.1828 - 1831, 2013/12
被引用回数：0 パーセンタイル：0.01We have investigated crystal quality of Co(MnFe)Si (CMFS) epitaxially grown on Ge(111) by using Rutherford-backscattering spectrometry and an axial-ion-channeling technique. It was found that the CMFS/Ge and CoFeSi (CMFS with x = 1)/Ge have larger static atomic displacement than Fe-based ternary Heusler alloy FeMnSi and FeCoSi/Ge(111). Quaternary alloys may be affected by increase of mixing entropy. Significant disordering at the interface of CMFS with x = 0.75 was found, and discussed on the basis of thermodynamics.
MnSi/Ge(111) heteroepitaxial interfaces野口 雄也*; 平田 智昭*; 川久保 雄基*; 鳴海 一雅; 境 誠司; 前田 佳均
no journal, ,
We have investigated perfection of atomic rows on iron-based Heusler alloy films, FeMnSi, on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. FeMnSi/Ge(111) (x=0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x = 0.75. This is in contract with FeSi/Ge(111) and FeCoSi/Ge(111) which have a high quality of atomic rows at the heterointerface like that of perfect crystals. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.
