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論文

Unusual plastic deformation behavior in lath martensitic steel containing high dislocation density

Harjo, S.; 川崎 卓郎; 友田 陽*; Gong, W.

Materials Science Forum, 905, p.46 - 51, 2017/08

To understand the strengthening mechanism of a metallic material with high dislocation density, the plastic deformation behavior of lath martensite was studied by means of in situ neutron diffraction measurements during tensile deformations using a 22SiMn2TiB steel and a Fe-18Ni alloy. The characteristics of dislocation were analyzed and were discussed with the relation of stress-strain curves. The dislocation densities induced by martensitic transformation during heat-treatment in both materials were found to be originally as high as 10$$^{15}$$ m$$^{-2}$$ order, and subsequently to increase slightly by the tensile deformation. The parameter M value which displays the dislocation arrangement dropped drastically at the beginning of plastic deformation in both materials, indicating that the random arrangement became more like a dipole arrangement.

論文

Quantitative evaluation of texture and dislocations during annealing after hot deformation in austenitic steel using neutron diffraction

友田 陽*; 佐藤 成男*; Uchida, M.*; 徐 平光; Harjo, S.; Gong, W.; 川崎 卓郎

Materials Science Forum, 905, p.25 - 30, 2017/08

Microstructural change during hot compressive deformation at 700 $$^{circ}$$C followed by isothermal annealing for a Fe-32Ni austnitic alloy was monitored using ${it in situ}$ neutron diffraction. The evolution of deformation texture with 40% compression and its change to recrystallization texture during isothermal annealing were presented by inverse pole figures for the axial and radial directions. The change in dislocation density was tracked using the convolutional muli-profile whole profile fitting method. To obtain the fitting results with good statistics, at least 60 s time-slicing for the event-mode recorded data was needed. The average dislocation density in 60 s after hot compression was determined to be 2.8 $$times$$ 10$$^{14}$$ m$$^{-2}$$ that decreased with increasing of annealing time.

論文

Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

横関 貴史; 阿部 浩之; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; 土方 泰斗*; 大島 武

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Since silicon carbide (SiC) has high radiation resistance, it is expected to be applied to electronic devices used in harsh radiation environments, such as nuclear facilities. Especially, extremely high radiation resistant devices (MGy order) are required for decommissioning of TEPCO Fukushima Daiichi nuclear reactors. The development of radiation resistant devices based on Metal-Oxide-Semiconductor (MOS) FETs is important since MOSFETs can easily realize normally-off and low-loss power devices. In this study, we irradiated vertical power 4H-SiC MOSFETs with gamma-rays up to 1.2 MGy, and investigated the recovery of their degraded characteristics due to thermal annealing up to 360 $$^{circ}$$C. The drain current (I$$_{D}$$) - gate voltage (V$$_{G}$$) curves of SiC MOSFETs shift to the negative voltage side and the leakage of I$$_{D}$$ increased by irradiation at 1.2 MGy. After the irradiation, the MOSFETs were kept at RT for 240 h. By the RT-annealing, no significant change in the degraded electrical characteristics of SiC MOSFETs was observed. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 $$^{circ}$$C, and their characteristics reach almost the initial ones by annealing at 360 $$^{circ}$$C.

論文

Engineering & Related Studies at J-PARC

Harjo, S.; 相澤 一也; 阿部 淳*; Gong, W.; 伊藤 崇芳*; 川崎 卓郎; 岩橋 孝明

Materials Science Forum, 777, p.12 - 18, 2014/04

Current status of a dedicated neutron diffractometer (TAKUMI) for investigations of stresses and crystallographic structures in engineering components, that has been built at Materials and Life Science Facility of J-PARC, was introduced as well as the engineering studies done there. Several topics recently performed at TAKUMI were selected to be introduced; internal strains in an ITER central solenoid conductor sample, internal strains in a rebar embedded in an air-cured concrete, deformation behavior TRIP steels at RT and tensile behavior of LPSO Mg-Zn-Y alloys. These topics and the relevant results showed that TAKUMI is a powerful neutron diffractometer for various engineering studies.

論文

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

梅田 享英*; 岡本 光央*; 荒井 亮*; 佐藤 嘉洋*; 小杉 亮治*; 原田 信介*; 奥村 元*; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.414 - 417, 2014/02

 被引用回数:2 パーセンタイル:13.98

炭化ケイ素(SiC)金属-酸化膜-半導体 電界効果トランジスタ(MOS FET)の界面欠陥を電流検出型磁気共鳴(EDMR)により調べた。SiC MOSFETはカーボン(C)面上に作製し、水蒸気酸化及び800$$^{circ}$$Cでの水素処理、又は、乾燥酸素を用いた二種類の方法によりゲート酸化膜を形成した。乾燥酸素によるゲート酸化膜を有するMOSFETのチャンネル移動度は1cm$$^{2}$$/Vs以下であるが、水素処理ゲート酸化膜を有するMOSFETは90cm$$^{2}$$/Vsである。低温(20K以下)でのEDMR測定の結果、シリコン面上に作製したMOSFETでは観測されないC面特有の欠陥シグナルが検出された。$$gamma$$線照射を行ったところ、このC面特有の欠陥シグナルが大きくなり、それとともにチャンネル移動度が低下することが判明した。これより、水素処理により終端されていたC欠陥が$$gamma$$線照射により離脱し、C面固有の欠陥となること、この欠陥がチャンネル移動度の低下に関与することが推測される。

論文

Influence of beam divergence on pseudo-strain induced in time-of-flight neutron diffraction

鈴木 裕士; Harjo, S.; 阿部 淳*; 秋田 貢一

Materials Science Forum, 777, p.105 - 111, 2014/02

 被引用回数:1 パーセンタイル:30.1

飛行時間中性子回折法において、表面効果や減衰効果によって生じるPseudo-strainに及ぼすビーム発散の影響について検討した。入射ビームの発散をコントロールすることにより、異なる装置分解能において、焼なまし材の表面ひずみスキャンを行った。典型的なPseudo-strain分布が観察されたが、ビーム発散によって異なる傾向を示した。さらに、粗大粒材料のひずみ測定において発生する粗大粒由来のPseudo-strainについても、入射ビームの発散をコントロールすることによって抑制できることを示した。したがって、飛行時間中性子回折計においては、表面効果や減衰効果によって生じるPseudo-strainを抑制するために、入射ビームの発散を十分に考慮することが必要である。

論文

Radiation-induced currents in 4H-SiC dosimeters for real-time $$gamma$$-ray dose rate monitoring

藤田 奈津子; 岩本 直也; 小野田 忍; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.1042 - 1045, 2014/02

 被引用回数:1 パーセンタイル:30.1

炭化ケイ素(SiC)は耐放射線性デバイスへの応用が期待され、高温下での安定動作も可能であるため、$$gamma$$線検出器の候補材料となりうる。そこで本研究では$$gamma$$線によってSiC検出器に誘起される電流を測定し、線量率計として使用できるか検討した。$$gamma$$線の線量率を0.4Gy/hから4kGy/hのとき、バイアス電圧が5V以上では吸収線量と$$gamma$$線誘起電流の間に良い直線性があり、傾きが約1であることがわかった。これは、SiC検出器が線量率計として使用できることを示している。

論文

Residual strains in ITER conductors by neutron diffraction

Harjo, S.; 辺見 努; 阿部 淳; Gong, W.; 布谷 嘉彦; 相澤 一也; 伊藤 崇芳*; 小泉 徳潔; 町屋 修太郎*; 長村 光造*

Materials Science Forum, 777, p.84 - 91, 2014/02

Measurements of internal strains in the superconducting phase in two cable-in-conduit conductors (CICC) for ITER were performed using an engineering materials diffractometer TAKUMI of J-PARC. From strain measurements in a CICC for the toroidal field magnet after a performance test of cyclic current, in 100 mm long cut bars, a peak broadening and a large relaxation on residual thermal strain were observed in Nb$$_{3}$$Sn phase at a portion received a high magnetic field (high field zone). Internal strain measurements were also conducted in a CICC for the central solenoidal magnets after the similar performance test, in the full-size shape as used in the performance test (3.6 m long) and in 100 mm long cut bars. From results of the measurements the performances degradations of the ITER conductors were clarified.

論文

Strain analysis in Geological materials using Neutron diffraction and AE signal measurement at J-PARC/BL19 "TAKUMI"

阿部 淳*; 関根 孝太郎*; Harjo, S.; Gong, W.; 相澤 一也

Materials Science Forum, 777, p.219 - 224, 2014/02

Acoustic emission (AE) signal can detect crack initiation and deformation behavior in material. Macroscopic deformation and fracturing of rock materials might be influenced by these phenomena. In order to investigate deformation mechanism of rock samples, simultaneous measurements of neutron diffraction pattern and AE signal have been performed at the Engineering Materials Diffractometer "TAKUMI" in J-PARC. Two types of rock samples were applied to the experiments. Discrepancy is found between microscopic strain and lattice strain. And AE signals from rock samples which might be generated by grain slip and pore collapse were detected. Macroscopic strain in rock sample might be associated with not only lattice strain but also mineral grain slip and pore collapse generated inside rock. It is indicated that combination of signal measurements and diffraction technique is effective tool to investigate deformation mechanism in rock materials.

論文

Temperature dependence of electric conductivities in femtosecond laser modified areas in silicon carbide

出来 真斗*; 岡 知輝*; 高吉 翔大*; 直井 美貴*; 牧野 高紘; 大島 武; 富田 卓朗*

Materials Science Forum, 778-780, p.661 - 664, 2014/02

 被引用回数:2 パーセンタイル:13.98

炭化ケイ素(SiC)基板へフェムト秒レーザー照射を行うと、SiCの比抵抗が5桁程度低下することが知られている。本研究ではフェムト秒レーザーを照射したSiCの電気伝導機構に関する知見を得るため、フェムト秒レーザー照射部における抵抗値の温度依存性を測定し、照射部の活性化エネルギーを求めた。試料は半絶縁性SiCであり、基板上に1mmの間隔を設けて蒸着した2つのアルミニウム電極の間へフェムト秒レーザーを照射した。照射条件は、照射エネルギー密度21J/cm$$^{2}$$、レーザー走査速度100$$mu$$m/secとした。フェムト秒レーザー照射後、測定温度122$$sim$$473Kにおいて電極間の抵抗値の温度依存性を測定した。その結果、伝導体の下端からそれぞれ8.3および86meVにおいてエネルギー準位が存在することがわかった。以上のことより、照射エネルギー密度21J/cm$$^2$$の室温における抵抗値の低下は、8.3meVの活性化エネルギーを持つ順位に起因していると考えられる。

論文

Defect levels in high purity semi-insulating 4H-SiC studied by alpha particle induced charge transient spectroscopy

岩本 直也; 小野田 忍; 藤田 奈津子; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.289 - 292, 2014/02

 パーセンタイル:100

We have studied defect levels in Schottky barrier diodes (SBDs) made of high purity semi-insulating 4H silicon carbide substrates by alpha particle induced charge transient spectroscopy. A shallow defect level with the activation energy around 0.3 eV is found in all SBDs annealed at temperatures from 1400 to 1600 $$^{circ}$$C. Some other defect levels lying at deeper in the bandgap are found only in SBDs annealed at 1400 and 1500 $$^{circ}$$C. We also found that the series resistance of SBDs decreases with increasing of annealing temperature. The decrease of series resistance seems to be corresponding to the removal of deep levels.

論文

Single event gate rupture in SiC MOS capacitors with different gate oxide thicknesses

出来 真斗*; 牧野 高紘; 児島 一聡*; 富田 卓朗*; 大島 武

Materials Science Forum, 778-780, p.440 - 443, 2014/02

 パーセンタイル:100

炭化ケイ素(4H-SiC)半導体を用いて作製した金属-酸化膜-半導体(Metal Oxide Semiconductor: MOS)キャパシタにおける高エネルギー重イオンに対する信頼性について検討した。実験は、蓄積方向に直流電界を印加した4H-SiC MOSキャパシタへ重イオンを照射し、酸化膜の絶縁破壊電界(Ecr)を測定した。重イオンのLET(Linear Energy Transfer: LET)を変えた照射を行うことでEcrのLET依存性の実測に成功し、Ecrは照射重イオンのLETに反比例する結果が得られた。この実験結果と、既に報告されているシリコン(Si)MOSキャパシタにおけるEcrのLET依存性とを比較した結果、Siと比較してSiC MOSキャパシタの方がEcrが大きく絶縁破壊耐性が高いことが明かになった。

論文

Internal stress measurement of weld part using diffraction spot trace method

鈴木 賢治*; 菖蒲 敬久; 城 鮎美; Zhang, S.*

Materials Science Forum, 777, p.155 - 160, 2014/02

The spiral slit-system was improved in order to make a gauge length regularity. The bending stress was measured by the improved spiral slit-system, and the measured stresses corresponded to the applied stress regardless of the diffraction angle. As a result, the validity of the improved spiral slit system was proved. On the other hand, the diffraction spot trace method (DSTM), which combined the spiral slit-system and a PILATUS detector, was proposed to measure stress in a coarse grain. In this study, the distribution of the residual stress in a melt-run welding specimen was measured using the DSTM. The welding residual stresses measured accorded with that by the FEM simulation.

論文

Evaluation of ductile damage progress of aluminum single crystal with prior activity of single slip system under tensile loading by using synchrotron white X-ray

柴野 純一*; 梶原 堅太郎*; 塚本 拓也*; 河合 紘和*; 三浦 節男*; Zhang, S.*; 菖蒲 敬久; 小林 道明*

Materials Science Forum, 777, p.176 - 181, 2014/02

A ductile damage progress of an aluminum single crystal with the prior activity of the single slip system under tensile loading was verified by a profile analysis using white X-ray obtained in BL28B2 beam line of SPring-8. In this study, the aluminum single crystal of the purity 6N was used as a specimen prepared in I-type geometry for tensile test. In profile analysis, an instrumental function was defined in consideration both of a divergence by a slit and a response function peculiar to the energy dispersive method. The Gauss component of integral breadth related to non-uniform strain and the Cauchy component of integral breadth related to crystallite size were determined by eliminating the broadening by the instrumental function from the diffraction profile of white X-ray. As a result, the characteristics of ductile damage progress near the notch of the aluminum single crystal were inspected from the distribution of both non-uniform strain and dislocation density.

論文

Residual strain of OFC using synchrotron radiation

佐野 睦*; 高橋 直*; 渡辺 篤雄*; 城 鮎美; 菖蒲 敬久

Materials Science Forum, 777, p.255 - 259, 2014/02

Residual strain in oxygen-free copper, one of the materials used in high-heat-load components at SPring-8 front end, was investigated. A strain scanning method with oscillation was employed for strain measurement. The results were compared with those obtained using an elasto-plastic creep FEM analysis.

論文

Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100$$^{circ}$$C and 1500$$^{circ}$$C and measurements of lifetime and photoluminescence

Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; 河原 洸太朗*; 木本 恒暢*; 大島 武

Materials Science Forum, 778-780, p.273 - 276, 2014/02

Ultra-pure n-type (8$$times$$10$$^{13}$$ cm$$^{-3}$$), 99 $$mu$$m thick epitaxial layers of hexagonal (4H) silicon carbide (SiC) were irradiated with electrons either at 170 keV with a fluence of 5$$times$$10$$^{16}$$ cm$$^{-2}$$ or at 1 MeV with a fluence of 1$$times$$10$$^{15}$$ cm$$^{-2}$$ in various geometries. Low temperature photoluminescence (LTPL) spectra and microwave photoconductance ($$mu$$PCD) lifetime measurements were carried out for all samples before and after annealing in argon in free standing mode or on a POCO carbon (Poco Graphite, Inc.) platform, every 50 $$^{circ}$$C from 1100 $$^{circ}$$C to 1500 $$^{circ}$$C. However, no improvement in carrier lifetime was observed although previous studies reported that carbon diffused into SiC during high temperature treatment improves carrier lifetime. The result obtained in this study suggests that simple carbon diffusion model cannot be applied and more study is required to understand the injection of carbon interstitials into the SiC lattice.

論文

Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC

三宅 景子*; 安田 智成*; 加藤 正史*; 市村 正也*; 畑山 智亮*; 大島 武

Materials Science Forum, 778-780, p.503 - 506, 2014/02

Photolytic hydrogen generation using sunlight is regarded as energy production technology for the next generation. One of the key of issues for this technology is a selection of materials for the photolysis. Silicon carbide (SiC) is expected as one of the candidate materials for this application. In this study, we measured carrier lifetimes in SiC by the microwave photoconductivity decay ($$mu$$PCD) method. In order to control carrier lifetime in SiC, some samples were irradiated with 160 keV-electrons with fluences between 1$$times$$10$$^{16}$$ and 1$$times$$10$$^{17}$$ /cm$$^{2}$$. The values of carrier lifetime in SiC were compared to photocurrents in electrolytes which directly relate to the conversion efficiency of photolytic hydrogen generation. As a result, photocurrents depend on the sum of the depletion layer width and the diffusion length which was estimated from carrier lifetimes.

論文

Identification of structures of the deep levels in 4H-SiC

中根 浩貴*; 加藤 正史*; 市村 正也*; 大島 武

Materials Science Forum, 778-780, p.277 - 280, 2014/02

Annealing behavior of the carrier lifetime and the deep levels in electron irradiated n-type and semi-insulating hexagonal (4H) silicon carbide (SiC) was studied. As a result of photo induced current transient spectroscopy (PICTS) measurements, two peaks were observed for each sample. The height of those peaks depended on annealing temperature. Comparing the annealing behavior of the peak height with temperature dependence of concentrations of various defects reported previously, we speculated that the observed peaks originate from either divacancy of silicon vacancy and carbon vacancy (V$$_{Si}$$V$$_{C}$$) or pair of carbon antisite and carbon vacancy (C$$_{Si}$$V$$_{C}$$).

論文

Effect of neutron attenuation on strain measurement with large gauge volume

鈴木 裕士; 勝山 仁哉; 秋田 貢一

Materials Science Forum, 772, p.33 - 38, 2013/11

 被引用回数:1 パーセンタイル:30.1

中性子回折法により厚板試料のひずみ測定を行う場合、中性子線の強度を得るために、測定体積を大きくするとともに、試料内の中性子パス長さをできる限り短くすることが望ましい。しかし、測定体積が大きくなれば、中性子線の減衰がひずみ測定精度に影響する可能性がある。本研究では厚板突合せ溶接材を対象に、ひずみ測定精度に及ぼす中性子線の減衰の影響を理論的かつ実験的に検討した。その結果、測定体積が大きくなるほど、ひずみ分布の見かけの変化が大きくなること、中性子線の減衰に伴う回折プロファイルのゆがみにより、回折角度に見かけの変化が生じることを確認した。この回折角度の見かけの変化は、回折角度の増加に伴って小さくなる。以上のように、厚板試料内部のひずみ分布測定を行ううえでは、中性子線の減衰に伴う影響を考慮する必要があることを明らかにし、その影響を補正して高精度にひずみ測定を行う方法を提案した。

論文

Positron annihilation lifetime of irradiated polyimide

平出 哲也; 岡 壽崇; 森下 憲雄*; 出崎 亮; 島田 明彦

Materials Science Forum, 733, p.151 - 154, 2013/00

 被引用回数:5 パーセンタイル:6.01

カプトンで代表されるポリイミドは、極めて耐放射線性が高く、宇宙や放射線施設などの高放射線場で使用されている材料である。陽電子消滅寿命測定は材料分野で広く使われている手法であり、高分子材料の特性において重要な自由体積評価などに、電子と陽電子の三重項結合状態であるオルソーポジトロニウムの寿命が利用されてきた。しかし、カプトン中ではポジトロニウムが形成されないため、この手法が利用されてこなかった。今回われわれは、自由陽電子からの消滅寿命も、高分子の自由体積のような、空隙サイズに依存して変化することを温度依存性から示し、さらに照射効果が明確に観測できることを示すことで、これらの材料にも陽電子消滅寿命測定を利用可能であることを初めて示した。

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