※ 半角英数字
 年 ~ 
検索結果: 132 件中 1件目~20件目を表示


Initialising ...



Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...



Measurements of displacement cross section of tungsten under 389-MeV proton irradiation and thermal damage recovery

岩元 洋介; 吉田 誠*; 松田 洋樹; 明午 伸一郎; 佐藤 大樹; 八島 浩*; 薮内 敦*; 嶋 達志*

Materials Science Forum, 1024, p.95 - 101, 2021/03



Effect of gas microbubble injection and narrow channel structure on cavitation damage in mercury target vessel

直江 崇; 木下 秀孝; 粉川 広行; 涌井 隆; 若井 栄一; 羽賀 勝洋; 高田 弘

Materials Science Forum, 1024, p.111 - 120, 2021/03



New design of high power mercury target vessel of J-PARC

涌井 隆; 若井 栄一; 粉川 広行; 直江 崇; 花野 耕平*; 羽賀 勝洋; 島田 翼*; 鹿又 研一*

Materials Science Forum, 1024, p.145 - 150, 2021/03



Computational study of solute effects in tungsten under irradiation

鈴土 知明

Materials Science Forum, 1024, p.87 - 94, 2021/03



Unusual plastic deformation behavior in lath martensitic steel containing high dislocation density

Harjo, S.; 川崎 卓郎; 友田 陽*; Gong, W.

Materials Science Forum, 905, p.46 - 51, 2017/08

To understand the strengthening mechanism of a metallic material with high dislocation density, the plastic deformation behavior of lath martensite was studied by means of in situ neutron diffraction measurements during tensile deformations using a 22SiMn2TiB steel and a Fe-18Ni alloy. The characteristics of dislocation were analyzed and were discussed with the relation of stress-strain curves. The dislocation densities induced by martensitic transformation during heat-treatment in both materials were found to be originally as high as 10$$^{15}$$ m$$^{-2}$$ order, and subsequently to increase slightly by the tensile deformation. The parameter M value which displays the dislocation arrangement dropped drastically at the beginning of plastic deformation in both materials, indicating that the random arrangement became more like a dipole arrangement.


Quantitative evaluation of texture and dislocations during annealing after hot deformation in austenitic steel using neutron diffraction

友田 陽*; 佐藤 成男*; Uchida, M.*; 徐 平光; Harjo, S.; Gong, W.; 川崎 卓郎

Materials Science Forum, 905, p.25 - 30, 2017/08

Microstructural change during hot compressive deformation at 700 $$^{circ}$$C followed by isothermal annealing for a Fe-32Ni austnitic alloy was monitored using ${it in situ}$ neutron diffraction. The evolution of deformation texture with 40% compression and its change to recrystallization texture during isothermal annealing were presented by inverse pole figures for the axial and radial directions. The change in dislocation density was tracked using the convolutional muli-profile whole profile fitting method. To obtain the fitting results with good statistics, at least 60 s time-slicing for the event-mode recorded data was needed. The average dislocation density in 60 s after hot compression was determined to be 2.8 $$times$$ 10$$^{14}$$ m$$^{-2}$$ that decreased with increasing of annealing time.


Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

Thermal stability of deep level defects in high purity semi-insulating (HPSI) 4H-Silicon Carbide (SiC) substrates was studied. The samples were annealed from 700 to 1700 $$^{circ}$$C, and Schottky barrier diodes (SBDs) were fabricated on the samples. The SBDs were characterized by current-voltage, capacitance-voltage and admittance spectroscopy measurements. The forward current of SBDs increased substantially with the increase of annealing temperature, while the reverse leakage current remained below 10$$^{-12}$$ A. The capacitance of the samples annealed at 1400 and 1500 $$^{circ}$$C was essentially zero at bias voltages between 0 and 10 V, but after 1600 and 1700 $$^{circ}$$C annealing, the capacitance increased and started to respond to the bias voltage. The net hole concentrations in the 1600 and 1700 $$^{circ}$$C annealed substrates were estimated to be 0.5$$sim$$1$$times$$10$$^{14}$$ and 1$$sim$$4$$times$$10$$^{15}$$ /cm$$^{3}$$, respectively. From admittance spectroscopy, five defect levels were detected. Defect peaks relating to boron acceptors increased although defect peaks with deep levels decreased with increasing annealing temperature. Therefore, it can be concluded that deep levels which act as compensation centers for boron acceptors dissociate by high temperature annealing, and as a results, hole concentration increases.


Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

横関 貴史; 阿部 浩之; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; 土方 泰斗*; 大島 武

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Since silicon carbide (SiC) has high radiation resistance, it is expected to be applied to electronic devices used in harsh radiation environments, such as nuclear facilities. Especially, extremely high radiation resistant devices (MGy order) are required for decommissioning of TEPCO Fukushima Daiichi nuclear reactors. The development of radiation resistant devices based on Metal-Oxide-Semiconductor (MOS) FETs is important since MOSFETs can easily realize normally-off and low-loss power devices. In this study, we irradiated vertical power 4H-SiC MOSFETs with gamma-rays up to 1.2 MGy, and investigated the recovery of their degraded characteristics due to thermal annealing up to 360 $$^{circ}$$C. The drain current (I$$_{D}$$) - gate voltage (V$$_{G}$$) curves of SiC MOSFETs shift to the negative voltage side and the leakage of I$$_{D}$$ increased by irradiation at 1.2 MGy. After the irradiation, the MOSFETs were kept at RT for 240 h. By the RT-annealing, no significant change in the degraded electrical characteristics of SiC MOSFETs was observed. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 $$^{circ}$$C, and their characteristics reach almost the initial ones by annealing at 360 $$^{circ}$$C.


Engineering & Related Studies at J-PARC

Harjo, S.; 相澤 一也; 阿部 淳*; Gong, W.; 伊藤 崇芳*; 川崎 卓郎; 岩橋 孝明

Materials Science Forum, 777, p.12 - 18, 2014/04

 被引用回数:0 パーセンタイル:0.07

Current status of a dedicated neutron diffractometer (TAKUMI) for investigations of stresses and crystallographic structures in engineering components, that has been built at Materials and Life Science Facility of J-PARC, was introduced as well as the engineering studies done there. Several topics recently performed at TAKUMI were selected to be introduced; internal strains in an ITER central solenoid conductor sample, internal strains in a rebar embedded in an air-cured concrete, deformation behavior TRIP steels at RT and tensile behavior of LPSO Mg-Zn-Y alloys. These topics and the relevant results showed that TAKUMI is a powerful neutron diffractometer for various engineering studies.


C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

梅田 享英*; 岡本 光央*; 荒井 亮*; 佐藤 嘉洋*; 小杉 亮治*; 原田 信介*; 奥村 元*; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.414 - 417, 2014/02

 被引用回数:2 パーセンタイル:72.87

炭化ケイ素(SiC)金属-酸化膜-半導体 電界効果トランジスタ(MOS FET)の界面欠陥を電流検出型磁気共鳴(EDMR)により調べた。SiC MOSFETはカーボン(C)面上に作製し、水蒸気酸化及び800$$^{circ}$$Cでの水素処理、又は、乾燥酸素を用いた二種類の方法によりゲート酸化膜を形成した。乾燥酸素によるゲート酸化膜を有するMOSFETのチャンネル移動度は1cm$$^{2}$$/Vs以下であるが、水素処理ゲート酸化膜を有するMOSFETは90cm$$^{2}$$/Vsである。低温(20K以下)でのEDMR測定の結果、シリコン面上に作製したMOSFETでは観測されないC面特有の欠陥シグナルが検出された。$$gamma$$線照射を行ったところ、このC面特有の欠陥シグナルが大きくなり、それとともにチャンネル移動度が低下することが判明した。これより、水素処理により終端されていたC欠陥が$$gamma$$線照射により離脱し、C面固有の欠陥となること、この欠陥がチャンネル移動度の低下に関与することが推測される。


Influence of beam divergence on pseudo-strain induced in time-of-flight neutron diffraction

鈴木 裕士; Harjo, S.; 阿部 淳*; 秋田 貢一

Materials Science Forum, 777, p.105 - 111, 2014/02

 被引用回数:1 パーセンタイル:53.95



Radiation-induced currents in 4H-SiC dosimeters for real-time $$gamma$$-ray dose rate monitoring

藤田 奈津子; 岩本 直也; 小野田 忍; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.1042 - 1045, 2014/02

 被引用回数:1 パーセンタイル:53.95



Residual strains in ITER conductors by neutron diffraction

Harjo, S.; 辺見 努; 阿部 淳; Gong, W.; 布谷 嘉彦; 相澤 一也; 伊藤 崇芳*; 小泉 徳潔; 町屋 修太郎*; 長村 光造*

Materials Science Forum, 777, p.84 - 91, 2014/02

 被引用回数:2 パーセンタイル:72.87

Measurements of internal strains in the superconducting phase in two cable-in-conduit conductors (CICC) for ITER were performed using an engineering materials diffractometer TAKUMI of J-PARC. From strain measurements in a CICC for the toroidal field magnet after a performance test of cyclic current, in 100 mm long cut bars, a peak broadening and a large relaxation on residual thermal strain were observed in Nb$$_{3}$$Sn phase at a portion received a high magnetic field (high field zone). Internal strain measurements were also conducted in a CICC for the central solenoidal magnets after the similar performance test, in the full-size shape as used in the performance test (3.6 m long) and in 100 mm long cut bars. From results of the measurements the performances degradations of the ITER conductors were clarified.


Strain analysis in Geological materials using Neutron diffraction and AE signal measurement at J-PARC/BL19 "TAKUMI"

阿部 淳*; 関根 孝太郎*; Harjo, S.; Gong, W.; 相澤 一也

Materials Science Forum, 777, p.219 - 224, 2014/02

 被引用回数:4 パーセンタイル:87.39

Acoustic emission (AE) signal can detect crack initiation and deformation behavior in material. Macroscopic deformation and fracturing of rock materials might be influenced by these phenomena. In order to investigate deformation mechanism of rock samples, simultaneous measurements of neutron diffraction pattern and AE signal have been performed at the Engineering Materials Diffractometer "TAKUMI" in J-PARC. Two types of rock samples were applied to the experiments. Discrepancy is found between microscopic strain and lattice strain. And AE signals from rock samples which might be generated by grain slip and pore collapse were detected. Macroscopic strain in rock sample might be associated with not only lattice strain but also mineral grain slip and pore collapse generated inside rock. It is indicated that combination of signal measurements and diffraction technique is effective tool to investigate deformation mechanism in rock materials.


Temperature dependence of electric conductivities in femtosecond laser modified areas in silicon carbide

出来 真斗*; 岡 知輝*; 高吉 翔大*; 直井 美貴*; 牧野 高紘; 大島 武; 富田 卓朗*

Materials Science Forum, 778-780, p.661 - 664, 2014/02

 被引用回数:2 パーセンタイル:72.87



Defect levels in high purity semi-insulating 4H-SiC studied by alpha particle induced charge transient spectroscopy

岩本 直也; 小野田 忍; 藤田 奈津子; 牧野 高紘; 大島 武

Materials Science Forum, 778-780, p.289 - 292, 2014/02

 被引用回数:0 パーセンタイル:0.32

We have studied defect levels in Schottky barrier diodes (SBDs) made of high purity semi-insulating 4H silicon carbide substrates by alpha particle induced charge transient spectroscopy. A shallow defect level with the activation energy around 0.3 eV is found in all SBDs annealed at temperatures from 1400 to 1600 $$^{circ}$$C. Some other defect levels lying at deeper in the bandgap are found only in SBDs annealed at 1400 and 1500 $$^{circ}$$C. We also found that the series resistance of SBDs decreases with increasing of annealing temperature. The decrease of series resistance seems to be corresponding to the removal of deep levels.


Single event gate rupture in SiC MOS capacitors with different gate oxide thicknesses

出来 真斗*; 牧野 高紘; 児島 一聡*; 富田 卓朗*; 大島 武

Materials Science Forum, 778-780, p.440 - 443, 2014/02

 被引用回数:2 パーセンタイル:82.41

炭化ケイ素(4H-SiC)半導体を用いて作製した金属-酸化膜-半導体(Metal Oxide Semiconductor: MOS)キャパシタにおける高エネルギー重イオンに対する信頼性について検討した。実験は、蓄積方向に直流電界を印加した4H-SiC MOSキャパシタへ重イオンを照射し、酸化膜の絶縁破壊電界(Ecr)を測定した。重イオンのLET(Linear Energy Transfer: LET)を変えた照射を行うことでEcrのLET依存性の実測に成功し、Ecrは照射重イオンのLETに反比例する結果が得られた。この実験結果と、既に報告されているシリコン(Si)MOSキャパシタにおけるEcrのLET依存性とを比較した結果、Siと比較してSiC MOSキャパシタの方がEcrが大きく絶縁破壊耐性が高いことが明かになった。


Internal stress measurement of weld part using diffraction spot trace method

鈴木 賢治*; 菖蒲 敬久; 城 鮎美; Zhang, S.*

Materials Science Forum, 777, p.155 - 160, 2014/02

 被引用回数:3 パーセンタイル:82.41

The spiral slit-system was improved in order to make a gauge length regularity. The bending stress was measured by the improved spiral slit-system, and the measured stresses corresponded to the applied stress regardless of the diffraction angle. As a result, the validity of the improved spiral slit system was proved. On the other hand, the diffraction spot trace method (DSTM), which combined the spiral slit-system and a PILATUS detector, was proposed to measure stress in a coarse grain. In this study, the distribution of the residual stress in a melt-run welding specimen was measured using the DSTM. The welding residual stresses measured accorded with that by the FEM simulation.


Evaluation of ductile damage progress of aluminum single crystal with prior activity of single slip system under tensile loading by using synchrotron white X-ray

柴野 純一*; 梶原 堅太郎*; 塚本 拓也*; 河合 紘和*; 三浦 節男*; Zhang, S.*; 菖蒲 敬久; 小林 道明*

Materials Science Forum, 777, p.176 - 181, 2014/02

 被引用回数:1 パーセンタイル:53.95

A ductile damage progress of an aluminum single crystal with the prior activity of the single slip system under tensile loading was verified by a profile analysis using white X-ray obtained in BL28B2 beam line of SPring-8. In this study, the aluminum single crystal of the purity 6N was used as a specimen prepared in I-type geometry for tensile test. In profile analysis, an instrumental function was defined in consideration both of a divergence by a slit and a response function peculiar to the energy dispersive method. The Gauss component of integral breadth related to non-uniform strain and the Cauchy component of integral breadth related to crystallite size were determined by eliminating the broadening by the instrumental function from the diffraction profile of white X-ray. As a result, the characteristics of ductile damage progress near the notch of the aluminum single crystal were inspected from the distribution of both non-uniform strain and dislocation density.


Residual strain of OFC using synchrotron radiation

佐野 睦*; 高橋 直*; 渡辺 篤雄*; 城 鮎美; 菖蒲 敬久

Materials Science Forum, 777, p.255 - 259, 2014/02

 被引用回数:1 パーセンタイル:53.95

Residual strain in oxygen-free copper, one of the materials used in high-heat-load components at SPring-8 front end, was investigated. A strain scanning method with oscillation was employed for strain measurement. The results were compared with those obtained using an elasto-plastic creep FEM analysis.

132 件中 1件目~20件目を表示