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Kinetics of silver photodiffusion into amorphous Ge$$_{20}$$S$$_{80}$$ films; Case of pre-reaction

坂口 佳史*; 花島 隆泰*; 青木 裕之; 朝岡 秀人; Simon, A.-A. A.*; Mitkova, M.*

Physica Status Solidi (A), 215(12), p.1800049_1 - 1800049_12, 2018/06

 被引用回数:4 パーセンタイル:32.53(Materials Science, Multidisciplinary)

Silver photodiffusion into amorphous chalcogenide has attracted much attention because of its potential applications for example in memory devices. For its development, it is important to know how Ag ions diffuse in chalcogenide layers upon light exposure. In this paper, the photo-induced effect on pre-reacted films before light exposure, originating from Ag/Ge$$_{20}$$S$$_{80}$$/Si substrate and Ge$$_{20}$$S$$_{80}$$/Ag/Si substrate is investigated, using neutron reflectivity, X-ray reflectivity, and X-ray diffraction. Two types of pre-reacted films according to the original stacking order are obtained. In both cases, a pure Ag layer almost disappeared, and there is a small amount of monoclinic Ag$$_{2}$$S. The reaction time for the photodiffusion is shorter, in both cases, than that in Ag/Ge$$_{20}$$S$$_{80}$$ with a pure Ag layer, indicating a different reaction process. After prolonged light exposure, a uniform amorphous reaction layer is produced in the films originating from the Ag/Ge$$_{20}$$S$$_{80}$$/Si substrate, while both an amorphous reaction product and the Ag$$_{2}$$S fragments exist in the films originating from Ge$$_{20}$$S$$_{80}$$/Ag/Si substrate. The mechanism of the specific photo-reaction is discussed in terms of the role of the Ag$$_{2}$$S fragments.


Fano factor evaluation of diamond detectors for alpha particles

嶋岡 毅紘*; 金子 純一*; 佐藤 優樹; 坪田 雅功*; 新名 宏明*; 茶谷原 昭義*; 渡辺 幸志*; 梅沢 仁*; 杢野 由明*

Physica Status Solidi (A), 213(10), p.2629 - 2633, 2016/10

 被引用回数:3 パーセンタイル:20.49(Materials Science, Multidisciplinary)

This report is the first describing experimental evaluation of Fano factor for diamond detectors. High-quality self-standing chemical vapor deposited diamond samples were produced using lift-off method. Alpha-particle induced charge measurements were taken for three samples. A 13.1 eV $$pm$$ 0.07 eV of the average electron-hole pair creation energy and excellent energy resolution of approximately 0.3$$%$$ were found for 5.486 MeV alpha particles from an $$^{241}$$Am radioactive source. The best Fano factor for 5.486 MeV alpha particles calculated from experimentally obtained epsilon values and the detector intrinsic energy resolution was 0.382 $$pm$$ 0.007.


Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

山口 尚人*; 小川 修一*; 渡辺 大輝*; 穂積 英彬*; Gao, Y.*; 江田 剛輝*; Mattevi, C.*; 藤田 武志*; 吉越 章隆; 石塚 眞治*; et al.

Physica Status Solidi (A), 213(9), p.2380 - 2386, 2016/09

 被引用回数:8 パーセンタイル:46.1(Materials Science, Multidisciplinary)



Processes of silver photodiffusion into Ge-chalcogenide probed by neutron reflectivity technique

坂口 佳史*; 朝岡 秀人; 魚住 雄輝; 川北 至信; 伊藤 崇芳*; 久保田 正人; 山崎 大; 曽山 和彦; Sheoran, G.*; Mitkova, M.*

Physica Status Solidi (A), 213(7), p.1894 - 1903, 2016/07

 被引用回数:7 パーセンタイル:41.71(Materials Science, Multidisciplinary)



New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

小野田 忍; 春山 盛善; 寺地 徳之*; 磯谷 順一*; 加田 渉*; 花泉 修*; 大島 武

Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11

 被引用回数:6 パーセンタイル:33.5(Materials Science, Multidisciplinary)

Nitrogen-vacancy (NV) center in diamond is a luminescent point defect with applications of quantum computation and atomic scale sensors. One of the most important features of NV center is high emission rate. This enables single NV centers to be detected using a confocal laser scanning microscope. In this study, we propose a new application of NV centers as a single ion track detector. We perform 490 MeV Os ion irradiation to diamond grown by chemical vapor deposition (CVD) technique. After high temperature annealing at 1000 $$^{circ}$$C, the ion track is able to be visualized by using confocal laser scanning microscope. In short, we have successfully detected ion track in diamonds.


Magnetic and dielectric properties of the ruthenium double perovskites La$$_{2}$$MRuO$$_{6}$$ (M=Mg, Co, Ni, and Zn)

吉井 賢資; 池田 直*; 水牧 仁一朗*

Physica Status Solidi (A), 203(11), p.2812 - 2817, 2006/09

 被引用回数:30 パーセンタイル:76.64(Materials Science, Multidisciplinary)



Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling

黒田 真司*; Marcet, S.*; Bellet-Amalric, E.*; Cibert, J.*; Mariette, H.*; 山本 春也; 酒井 卓郎; 大島 武; 伊藤 久義

Physica Status Solidi (A), 203(7), p.1724 - 1728, 2006/05

 被引用回数:6 パーセンタイル:28.48(Materials Science, Multidisciplinary)



Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe$$_{2}$$ thin films

Lee, H.-S.*; 岡田 浩*; 若原 昭浩*; 吉田 明*; 大島 武; 伊藤 久義; 川北 史朗*; 今泉 充*; 松田 純夫*

Physica Status Solidi (A), 199(3), p.471 - 474, 2003/10

 被引用回数:3 パーセンタイル:22.08(Materials Science, Multidisciplinary)

薄膜宇宙用太陽電池への応用が期待されているCuInSe$$_{2}$$半導体(CIS)の放射線照射効果を明らかにするために、0.38MeV, 1MeV, 3MeV陽子線照射によるキャリア濃度及び移動度の変化を調べた。用いた試料はガリウム砒素基板上にスパッタ法で作製したn型単結晶薄膜であり、未照射でのキャリア濃度は2$$times$$10$$^{16}$$から6$$times$$10$$^{16}$$/cm$$^{3}$$、移動度は105から135cm$$^{2}$$/Vsである。陽子線照射は室温にて1$$times$$10$$^{15}$$/cm$$^{15}$$まで行った。キャリア濃度と照射量の関係を解析することでキャリア減少率を求めたところ、3MeV陽子線照射では300cm$$^{-1}$$で0.38Mev陽子線照射では1800cm$$^{-1}$$と見積もられ、高エネルギー陽子線照射ほどキャリア減少率が低いことがわかった。この結果は、低エネルギー陽子線ほど表面付近での欠陥生成量が多く、今回のCIS薄膜試料に大きな損傷を与えるためと解釈できる。また、Hall移動度と照射量の関係を調べたところ、照射量の増加とともに移動度は減少し、1$$times$$10$$^{15}$$/cm$$^{2}$$照射では、初期値の1/3以下まで低下することが明らかになった。


Magnetic properties of (Mn$$_{1-x}$$V$$_{x}$$)Sb$$_{2}$$O$$_{4}$$ with one-dimensional magnetic arrays

阿部 英樹*; 吉井 賢資; 北澤 英明*

Physica Status Solidi (A), 189(2), p.429 - 432, 2002/02

 被引用回数:1 パーセンタイル:8.02(Materials Science, Multidisciplinary)



Recent progress and future R&D for high-chromium iron-base and chromium-base alloys

菱沼 章道; 高木 清一*; 安彦 兼次*

Physica Status Solidi (A), 189(1), p.69 - 78, 2002/01

 被引用回数:12 パーセンタイル:54.45(Materials Science, Multidisciplinary)



Effects of neutron irradiation on tensile properties in high-purity Fe-Cr alloys

若井 栄一; 菱沼 章道; 沢井 友次; 加藤 康*; 磯崎 誠一*; 高木 清一*; 安彦 兼次*

Physica Status Solidi (A), 160(2), p.441 - 448, 1997/00

 被引用回数:15 パーセンタイル:67.48(Materials Science, Multidisciplinary)



Intrinsic defects in cubic silicon carbide

伊藤 久義; 河裾 厚男; 大島 武; 吉川 正人; 梨山 勇; 谷川 庄一郎*; 三沢 俊司*; 奥村 元*; 吉田 貞史*

Physica Status Solidi (A), 162, p.173 - 198, 1997/00

 被引用回数:131 パーセンタイル:97.98(Materials Science, Multidisciplinary)



Internal friction in single-crystal Al alloys after electron irradiation at low temperature

小桧山 守*; 高村 三郎; 仲田 清智*

Physica Status Solidi (A), 108, p.219 - 224, 1988/09

 被引用回数:1 パーセンタイル:12.6(Materials Science, Multidisciplinary)


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