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Atom-photon coupling from nitrogen-vacancy centres embedded in tellurite microspheres

Ruan, Y.*; Gibson, B. C.*; Lau, D. W. M.*; Greentree, A. D.*; Ji, H.*; Ebendorff-Heidepriem, H.*; Johnson, B. C.*; 大島 武; Monro, T. M.*

Scientific Reports (Internet), 5, p.11486_1 - 11486_7, 2015/06

 被引用回数:4 パーセンタイル:29.28(Multidisciplinary Sciences)

A technique for creating high quality tellurite microspheres with embedded nano-diamonds (NDs) containing nitrogen-vacancy (NV) centers was developed. TZN tellurite glass (TeO$$_{2}$$-ZnO-Na$$_{2}$$O) was fabricated in-house using the melt-quench technique and was formed to be glass fiber with a diameter of 0.16 mm. During this process, NDs with NV centers which were created by electron irradiation at 2 MeV were added into TZN tellurite glass above 690 $$^{circ}$$C. To obtain uniformly dispersed ND solutions, the NDs were processed using strong acid reflux and ultra-sonication before the mixture with TZN tellurite glass. This method can realize very bright fluorescence of the NVs in the NDs at room temperature. It is concluded that this new approach can be applied to a robust way of creating cavities for use in quantum and sensing applications.


Coherent control of single spins in silicon carbide at room temperature

Widmann, M.*; Lee, S.-Y.*; Rendler, T.*; Son, N. T.*; Fedder, H.*; Paik, S.*; Yang, L.-P.*; Zhao, N.*; Yang, S.*; Booker, I.*; et al.

Nature Materials, 14(2), p.164 - 168, 2015/02

 被引用回数:309 パーセンタイル:99.49(Chemistry, Physical)

Single silicon vacancy (V$$_{Si}$$) in silicon carbide (SiC) was studied from the point of view of single photon source for quantum computing. The V$$_{Si}$$ centers were created in high purity semi-insulating hexagonal (4H)-SiC by 2 MeV electron irradiation with fluences up to 5$$times$$10$$^{15}$$ /cm$$^{2}$$. No subsequent annealing was carried out. A couple of solid immersion lens (SIL) with 20 $$mu$$m diameter were created on samples by ion milling using 40 keV Ga focused ion beam. A typical home-built confocal setup was used after optimizing for emission in the wavelength range around 900 nm. As a result, optically detected electron spin resonance (ODMR) for V$$_{Si}$$ was observed at room temperature (RT). Using ODMR, Rabi oscillations were also observed, and the Rabi frequency increased with increasing applied-magnetic field. In addition, spin relaxation time T$$_{1}$$ and T$$_{2}$$ were detected to be 500 $$mu$$s and 160 $$mu$$s, respectively.


Nanodiamond in tellurite glass, 2; Practical nanodiamond-doped fibers

Ruan, Y.*; Ji, H.*; Johnson, B. C.*; 大島 武; Greentree, A. D.*; Gibson, B. C.*; Monro, T. M.*; Ebendorff-Heidepriem, H.*

Optical Materials Express (Internet), 5(1), p.73 - 87, 2015/01

 被引用回数:16 パーセンタイル:72.75(Materials Science, Multidisciplinary)

Tellurite glass fibers with embedded nanodiamond are attractive materials for quantum photonics applications. Reducing the loss of these fibers in the 600-800 nm wavelength range of nanodiamond fluorescence is essential to exploit the unique properties of nanodiamond in the new hybrid material. We reported the origin of loss in nanodiamond-doped glass and impact of glass fabrication conditions, as part I. In this study, we report the fabrication of nanodiamond-doped tellurite fibers with significantly reduced loss in the visible through further understanding of the impact of glass fabrication conditions on the interaction of the glass melt with the embedded nanodiamond. We fabricated nanodiamond with Nitrogen-Vacancy (NV) centers by 2 MeV electron irradiation at 1$$times$$10$$^{18}$$ /cm$$^{2}$$ and subsequent annealing at 800 $$^{circ}$$C. The nanodiamonds with NV centers were added into molten Tellurite glass. Tellurite fibers containing nanodiamond with concentrations up to 0.7 ppm-weight were fabricated, while reducing the loss by more than an order of magnitude down to 10 dB/m at 600-800 nm.


Interplay between oxidized monovacancy and nitrogen doping in graphene

Hou, Z.*; Shu, D.-J.*; Chai, G.-L.*; 池田 隆司; 寺倉 清之*

Journal of Physical Chemistry C, 118(34), p.19795 - 19805, 2014/08

 被引用回数:10 パーセンタイル:38.87(Chemistry, Physical)



Negative magnetoresistance of pyrolytic carbon and effects of low-temperature electron irradiation

岩瀬 彰宏; 石川 法人; 岩田 忠夫*; 知見 康弘; 仁平 猛*

Physical Review B, 60(15), p.10811 - 10819, 1999/00

 被引用回数:4 パーセンタイル:29.28(Materials Science, Multidisciplinary)

熱分解黒鉛を35K以下で電子線照射し、磁気抵抗、ホール電圧を0-6Tの磁場下で、照射量の関数として測定した。測定結果をSimple Two Bandモデルを用いて解析し、以下のことがわかった。熱分解黒鉛の負の磁気抵抗は、電子に対してアクセプタとして働く格子欠陥、系の2次元性、欠陥によってブロードニングした2次元ランダウレベルの存在によって生じる。


L X-ray spectra of Fe and Cu by 0.75 MeV/u H, He, Si and Ar ion impacts

影山 拓良*; 川面 澄*; 高橋 竜平*; 荒井 重義*; 神原 正*; 大浦 正樹*; Papp, T.*; 金井 保之*; 粟谷 容子*; 竹下 英文; et al.

Nuclear Instruments and Methods in Physics Research B, 107(1-4), p.47 - 50, 1996/00

 被引用回数:2 パーセンタイル:32.32(Instruments & Instrumentation)

高速のイオン-原子衝突では内殻電子の励起・電離が起きる。KX線については従来多くの研究があるが、LX線は複雑な遷移を有するため研究例が少ない。本研究では、0.75MeV/uのH, He, SiおよびArイオンによってFe及びCuターゲットから放出されるLX線スペクトルを高分解能結晶分光器を用いて測定した。その結果、H及びHeに較べてSiやArイオンではスペクトルがより複雑な構造を持つことが分かった。理論計算との比較から、多重空孔の生成がスペクトルの複雑化の原因であることを明らかにした。


Irradiation induced stress relaxation and high temperature doformation behavior of neutron irradiated Ti based shape memory alloys

星屋 泰二; 後藤 一郎; 近江 正男; 安藤 弘栄; 江南 和幸*; 西川 雅弘*

Journal of Nuclear Materials, 212-215, p.818 - 822, 1994/00

 被引用回数:3 パーセンタイル:36.68(Materials Science, Multidisciplinary)



Effect of neutron irradiation on deformation behavior in TiPd-Cr high temperature shape memory alloys

星屋 泰二; 後藤 一郎; 近江 正男; 安藤 弘栄; 江南 和幸*; 山内 清*

Shape Memory Materials and Hydrides (Trans. of Materials Research Soc. Jpn., Vol. 18B), 0, p.1025 - 1028, 1994/00



A Positron lifetime study of defects in neutron-irradiated Si

A.Li*; H.Huang*; D.Li*; S.Zheng*; H.Du*; S.Zhu*; 岩田 忠夫

Japanese Journal of Applied Physics, 32(3), p.1033 - 1038, 1993/03

 被引用回数:8 パーセンタイル:45.35(Physics, Applied)

中性子照射したSiについて陽電子寿命測定を行い、100~800$$^{circ}$$Cにおける欠陥のアニーリングを調べた。陽電子寿命スペクトルの2成分フィッティングを行った。第1成分は完全結晶中のfreeな陽電子及びmonovacancy-substitutional oxygen complexesに捕獲された陽電子の平均に対応し、第2成分はdivacancyまたはdivacancy-substitutional oxygen complexes及びquadrivacancy-substitutional oxygen complexesに捕獲された陽電子の平均に対応するものであることを示した。2成分データをトラッピング模型によって解析し、これらのvacancy型欠陥による陽電子捕獲率(欠陥濃度に比例する)を求めた。これらの欠陥のアニーリングを議論した。


Vacancy-type defects in Cd, Al, Si, and GaAs studied using variable-energy positron beam

高村 三郎; 伊藤 泰男*

Physica Status Solidi (B), 172(2), p.529 - 537, 1992/08

 被引用回数:1 パーセンタイル:8.69(Physics, Condensed Matter)



Effect of additives on irradiation-induced change of lattice parameter in ThO$$_{2}$$

赤堀 光雄; 福田 幸朔

Journal of Nuclear Science and Technology, 28(9), p.841 - 847, 1991/09



$$omega$$-like diffraction anomaly in the premartensitic $$beta$$$$_{1}$$ phase of AuCuZn$$_{2}$$ alloy

永澤 耿*; 喜田 和枝*; 森井 幸生; 渕崎 員弘; 片野 進; 舩橋 達; H.R.Child*

Mater. Trans. JIM, 32(11), p.1011 - 1016, 1991/00

 被引用回数:3 パーセンタイル:44.06(Materials Science, Multidisciplinary)



Ion irradiation effects on critical current of superconducting Bi-Sr-Ca-Cu-O films

高村 三郎; 星屋 泰二; 有賀 武夫; 小桧山 守*

Japanese Journal of Applied Physics, 28(8), p.L1395 - L1397, 1989/08

 被引用回数:3 パーセンタイル:24.02(Physics, Applied)

Bi-Sr-Ca-Cu-O超電導薄膜を室温で400KeV Heイオン照射し、照射後の昇温に伴う臨界温度の回復過程を調べた。200~500$$^{circ}$$Cの焼鈍によって臨界温度および常電導状態での電気抵抗は急激に回復する。超電導110K相は、600$$^{circ}$$C焼鈍によって成長する。焼鈍する時の雰囲気として空気中で行ったとき、真空中で行ったときの差違を議論する。


Electrical conductivity of oxygen deficient urania-yttria solid solutions

大道 敏彦; 竹下 英文; 福島 奨; 前多 厚

Journal of Nuclear Materials, 151, p.90 - 94, 1987/00

 被引用回数:3 パーセンタイル:76.03(Materials Science, Multidisciplinary)



Rippled pattern of image in HVEM irradiated nickel

佐々木 茂美; 實川 資朗; 岩田 忠夫; 菱沼 章道

Japanese Journal of Applied Physics, 25(12), p.L964 - L966, 1986/12

 被引用回数:0 パーセンタイル:0.01(Physics, Applied)



Identification of small point defect clusters by high resolution electron microscopy

西田 雄彦; 出井 数彦

Point Defects and Defect Interactions in Metals, p.705 - 707, 1982/00



On the relation between lattice parameter and O/M ratio for uranium dioxide-trivalent rare earth oxide solid solution

大道 敏彦; 福島 奨; 前島 厚; 渡辺 斉

Journal of Nuclear Materials, 102, p.40 - 46, 1981/00

 被引用回数:122 パーセンタイル:99.63(Materials Science, Multidisciplinary)



Stability of vacancy due to noncentral force interactions in diamond structural crystals

田次 邑吉

Journal of the Physical Society of Japan, 48(4), p.1237 - 1244, 1980/00

 被引用回数:7 パーセンタイル:55.98(Physics, Multidisciplinary)



$$mu^+$$SR as a potential tool for depth-resolved detection of oxygen vacancies in perovskite oxides

伊藤 孝; 髭本 亘; 幸田 章宏*; 下村 浩一郎*

no journal, , 

Oxygen vacancy (V$$_{rm O}$$) is a major defect species in perovskite oxides, having a strong impact on their electrical, optical, and dielectric properties. In spite of its importance, experimental techniques that can directly detect V$$_{rm O}$$ are still limited. Through a series of $$mu^+$$SR measurements on oxygen-deficient SrTiO$$_{3}$$, we revealed that there is a clear positive correlation between the muon spin relaxation rate and the carrier concentration, which is expected to be roughly proportional to the V$$_{rm O}$$ donor concentration. This, together with the variability of muon implantation depth, suggests that $$mu^+$$SR spectroscopy is potentially suitable for depth-resolved analysis of V$$_{rm O}$$ distribution in perovskite oxides, which is complementary to cation vacancy-sensitive techniques, such as positron annihilation spectroscopy.

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