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高桑 雄二*; 石塚 眞治*; 吉越 章隆; 寺岡 有殿; 山内 康弘*; 水野 善之*; 頓田 英樹*; 本間 禎一*
Applied Surface Science, 216(1-4), p.395 - 401, 2003/06
被引用回数：19 パーセンタイル：65.06(Chemistry, Physical)SPring-8の原研軟X線ビームラインBL23SUに設置した「表面反応分析装置」を用いてTi(0001)表面のO
分子による酸化素過程を放射光による光電子分光法で実時間その場観察した。また、東北大学において反射高速電子線回折(RHEED)とオージェ電子分光(AES)によっても実時間その場観察を行った。酸素分圧を2
10
Torrから810
Torrの範囲とし、表面温度を473Kまたは673Kとした。光電子分光観察ではTi-2pとO-1s光電子スペクトルの時間発展を観察することで、清浄Ti表面がTiO変化する様子が観察された。また、RHEED-AES測定においては反射電子線強度とO-KLLオージェ電子強度が時間に依存した振動構造を示した。これらの実験結果から酸化されたTi(0001)表面の粗さの変化は表面の金属層の消失ばかりでなく、酸化結合状態の変化にも関係していることが明らかとなった。
7 studied by real-time photoelectron spectroscopy and theoretical calculationsTang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*
no journal, ,
Temperature dependence of oxygen adsorption states at Si(111)-77 surface was observed by real-time photoelectron spectroscopy. Moreover, the reaction path of O at the surface was obtained by molecular dynamics simulations and density functional theoretical calculations. The temperature dependent increase of saturated oxygen indicates that more oxygen atoms adsorb at the surface at higher tempetarures. Work function increases initially at low temperatures and then significantly decreases. It is known that work function is due to the surface dipole layer and the band bending effects. The band bending is found to be small during the initial oxidation, which implies that the surface dipole layer mainly affects work function.
田中 一馬*; 大野 真也*; 小玉 開*; 安部 壮祐*; 三浦 脩*; 成重 卓真*; 吉越 章隆; 寺岡 有殿; 田中 正俊*
no journal, ,
Recently, the complementary metal-oxide-semiconductor (CMOS) devices with three-dimensional nanostructure such as Si nanowire transistor were proposed. In these devices, there exist an SiO/Si interface grown on high-index planes. Therefore, research of the structure and chemical bonding nature of such an interface is an urgent task. In our previous work, we showed that characterization of the deformed Si-O-Si at the SiO/Si interface on Si(113) may be possible by analyzing both Si 2p and O 1s states simultaneously in the thermal oxidation process. However, the initial oxidation process on Si(113) at room temperature (RT) is still poorly understood. In this work, we investigated the initial oxidation process on Si(113) surfaces by real-time photoelectron spectroscopy.
/Si(001) interfaces induced by rapid temperature raising小川 修一*; Tang, J.*; 吉越 章隆; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*
no journal, ,
In this study, the dependence of SiO/Si(001) interface oxidation kinetics on the temperature was investigated by real-time RHEED combined with AES to measure the oxide growth rate. Based on the activation energy and pre-exponential factor, the rate-limiting step of the interface oxidation is discussed. As the result, activation energy is obtained as 0.27 eV in good agreement with the previous experimental and theoretical studies. On the other hand, pre-exponential factor decreases with increasing temperature, decreasing by about one order when temperature increases from RT to 834 K. In the XPS results, the Si
component increases, and suboxide components and strained Si components decrease with temperature elevation from 573 K to 873 K. Based on these results, we propose the reaction between point defects (emitted Si atoms and its vacancies) generated by the oxidation-induced strain and O molecules as the rate-limiting reaction of the interface oxidation.
