Initial oxidation processes on Si(113) surfaces at room temperature

室温におけるSi(113)表面の初期酸化過程

田中 一馬*; 大野 真也*; 小玉 開*; 安部 壮祐*; 三浦 脩*; 成重 卓真*; 吉越 章隆 ; 寺岡 有殿; 田中 正俊*

Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Abe, Sosuke*; Miura, Shu*; Narishige, Takuma*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*

Recently, the complementary metal-oxide-semiconductor (CMOS) devices with three-dimensional nanostructure such as Si nanowire transistor were proposed. In these devices, there exist an SiO/Si interface grown on high-index planes. Therefore, research of the structure and chemical bonding nature of such an interface is an urgent task. In our previous work, we showed that characterization of the deformed Si-O-Si at the SiO/Si interface on Si(113) may be possible by analyzing both Si 2p and O 1s states simultaneously in the thermal oxidation process. However, the initial oxidation process on Si(113) at room temperature (RT) is still poorly understood. In this work, we investigated the initial oxidation process on Si(113) surfaces by real-time photoelectron spectroscopy.