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Oxide growth kinetics at SiO$$_{2}$$/Si(001) interfaces induced by rapid temperature raising

急速加熱によるSiO$$_{2}$$/Si(001)界面における酸化膜成長の速度論

小川 修一*; Tang, J.*; 吉越 章隆 ; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*

Ogawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

In this study, the dependence of SiO$$_{2}$$/Si(001) interface oxidation kinetics on the temperature was investigated by real-time RHEED combined with AES to measure the oxide growth rate. Based on the activation energy and pre-exponential factor, the rate-limiting step of the interface oxidation is discussed. As the result, activation energy is obtained as 0.27 eV in good agreement with the previous experimental and theoretical studies. On the other hand, pre-exponential factor decreases with increasing temperature, decreasing by about one order when temperature increases from RT to 834 K. In the XPS results, the Si$$^{4+}$$ component increases, and suboxide components and strained Si components decrease with temperature elevation from 573 K to 873 K. Based on these results, we propose the reaction between point defects (emitted Si atoms and its vacancies) generated by the oxidation-induced strain and O$$_{2}$$ molecules as the rate-limiting reaction of the interface oxidation.

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