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高桑 雄二*; 小川 修一*; 石塚 眞治*; 吉越 章隆; 寺岡 有殿
触媒, 47(5), p.352 - 357, 2005/08
Ti(0001)表面酸化反応を高輝度放射光とHe-I共鳴線を用いた光電子分光でリアルタイムモニタリングした。Ti2pとO1s内殻準位,価電子帯の光電子スペクトルから求めた酸素吸着量,酸化状態,酸化膜厚,電子状態,仕事関数の時間発展から解明した酸素吸着モデルと極薄酸化膜形成過程について解説した。
高桑 雄二*; 石塚 眞治*; 吉越 章隆; 寺岡 有殿; 山内 康弘*; 水野 善之*; 頓田 英樹*; 本間 禎一*
Applied Surface Science, 216(1-4), p.395 - 401, 2003/06
被引用回数：19 パーセンタイル：65.49(Chemistry, Physical)SPring-8の原研軟X線ビームラインBL23SUに設置した「表面反応分析装置」を用いてTi(0001)表面のO
分子による酸化素過程を放射光による光電子分光法で実時間その場観察した。また、東北大学において反射高速電子線回折(RHEED)とオージェ電子分光(AES)によっても実時間その場観察を行った。酸素分圧を2
10
Torrから810
Torrの範囲とし、表面温度を473Kまたは673Kとした。光電子分光観察ではTi-2pとO-1s光電子スペクトルの時間発展を観察することで、清浄Ti表面がTiO変化する様子が観察された。また、RHEED-AES測定においては反射電子線強度とO-KLLオージェ電子強度が時間に依存した振動構造を示した。これらの実験結果から酸化されたTi(0001)表面の粗さの変化は表面の金属層の消失ばかりでなく、酸化結合状態の変化にも関係していることが明らかとなった。
小川 修一*; 山田 貴壽*; 石塚 眞治*; 吉越 章隆; 長谷川 雅考*; 寺岡 有殿; 高桑 雄二*
no journal, ,
The behavior of C atoms in vacuum annealing/cooling processes for a graphene/Cu(111) has been investigated using synchrotron radiation photoelectron spectroscopy (SR-XPS). The sample structure is graphene/Cu(111)/AlO
(0001), in which graphene was grown by a thermal CVD method at 1273 K. The C 1s, O 1s, and Cu 3s SR-XPS spectra were measured in situ during annealing/cooling in vacuum. The graphene coverage at a low temperature region below 873 K is almost 1 monolayer (ML), but it decreased with increasing temperature. At 1223 K, the coverage reached 0.4 ML. This indicates the graphene decomposed and C atoms diffused into the Cu substrate. It was also found from SIMS measurement that the amount of diffused C atoms in the thermal CVD process is smaller than that after vacuum annealing. These results suggest that the C atom diffusion into the Cu occurs frequently, but the diffused C atoms do not contribute to the graphene growth on the Cu surface.
Tang, J.*; 小川 修一*; 吉越 章隆; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*
no journal, ,
Although the oxide decomposition was observed to proceed via void nucleation and subsequent enlargement with SiO desorption and the void growth, it is still not clear what is a trigger to nucleate voids at SiO/Si interface. Recently, we reported that the emission of Si atom caused by the oxidation-induced strain at SiO/Si interface is likely responsible for nucleating voids. In this study, the thermal decomposition kinetics of ultrathin SiO film on Si(001) and Si(111) surfaces have been investigated using real-time X-ray photoelectron spectroscopy with photon energy of 711 eV at JAEA beamline BLSU23, SPring-8 to confirm the void nucleation model.
Au; Protective layer formation岡田 美智雄*; 寺岡 有殿
no journal, ,
It has been found that Cu products containing Au keep their bodies from oxidation. In the oxidation of the CuAu(100) surface, dissociative adsorption of O occurs accompanied by Cu segregation on the surface. No obvious growth of CuO was observed, even for prolonged doses of the 2.3 eV hyperthermal O molecular beam. Thus, it was proposed that surface alloying of Cu-based material with Au works as a perfect protective layer. On the other hand, on the more open (110) surface, additional oxidation-related processes contribute to CuO formation. Although, as on (100), Cu segregation on the (110) surface occurs, the oxidation efficiency is nearly the same for exposure of Cu(110) and CuAu(110) to thermal O. In our recent study for the (111) surface, strong Au segregation to the top layer was found, while on the oxidized surface Cu segregation and formation of the Au rich second (47 at% Au) and third layer (45 at% Au) were found.
