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Phase change observed in ultrathin Ba$$_{0.5}$$Sr$$_{0.5}$$TiO$$_3$$ films by in situ resonant photoemission spectroscopy

in situ共鳴光電子分光によりBa$$_{0.5}$$Sr$$_{0.5}$$TiO$$_3$$極薄膜で観測された相変化

Lin, Y.-H.*; 寺井 恒太*; 和達 大樹*; 小林 正起*; 滝沢 優*; Hwang, J. I.*; 藤森 淳; Nan, C.-W.*; Li, J.-F.*; 藤森 伸一; 岡根 哲夫; 斎藤 祐児; 小林 啓介*

Lin, Y.-H.*; Terai, Kota*; Wadachi, Hiroki*; Kobayashi, Masaki*; Takizawa, Masaru*; Hwang, J. I.*; Fujimori, Atsushi; Nan, C.-W.*; Li, J.-F.*; Fujimori, Shinichi; Okane, Tetsuo; Saito, Yuji; Kobayashi, Keisuke*

パルスレーザー堆積法によりNbをドープしたSrTiO$$_3$$(100)基板上にBa$$_{0.5}$$Sr$$_{0.5}$$TiO$$_3$$のエピタキシャル薄膜を作製し、室温と低温で価電子帯のTi 2p$$rightarrow$$3dの共鳴光電子分光スペクトルを測定した。その結果膜厚が2.8nm($$sim$$7ML)と2.0nm($$sim$$5ML)の間で大きな違いがみられ、強誘電転移の臨界膜厚が2.0-2.8nmの範囲にあることがわかった。

Epitaxial Ba$$_{0.5}$$Sr$$_{0.5}$$TiO$$_3$$ thin films were prepared on Nb-doped SrTiO$$_3$$ (100) substrates by the pulsed laser deposition technique and were studied by measuring the Ti 2p $$rightarrow$$ 3d resonant photoemission spectra in the valence-band region, both at room temperature and low temperature. The results demonstrated an abrupt variation in the spectral structures between 2.8 nm ($$sim$$7 ML) and 2.0 nm ($$sim$$5 ML) Ba$$_{0.5}$$Sr$$_{0.5}$$TiO$$_3$$ films, suggesting that there exists a critical thickness for phase change in the range of 2.0-2.8 nm.

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パーセンタイル:75.34

分野:Physics, Applied

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