Synchrotron X-ray photoelectron spectroscopy study on thermally grown SiO/4H-SiC(0001) interface and its correlation with electrical properties

熱成長法で作製したSiO/4H-SiC(0001)界面に関するシンクロトロン放射光によるX線光電子分光評価と電気特性との相関

渡部 平司*; 細井 卓治*; 桐野 嵩史*; 景井 悠介*; 上西 悠介*; Chanthaphan, A.*; 吉越 章隆 ; 寺岡 有殿; 志村 考功*

Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Kagei, Yusuke*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*

The correlation between atomic structure and the electrical properties of thermally grown SiO/4H-SiC(0001) interfaces was investigated by synchrotron X-ray photoelectron spectroscopy together with electrical measurements of SiC-MOS capacitors. We found that the oxide interface was dominated by Si-O bonds and that there existed no distinct C-rich layer beneath the SiC substrate despite literature. In contrast, intermediate oxide states in Si core-level spectra attributable to atomic scale roughness and imperfection just at the oxide interface increased as thermal oxidation progressed. Electrical characterization of corresponding SiC-MOS capacitors also indicated an accumulation of both negative fixed charges and interface defects, which correlates well with the structural change in the oxide interface and provides insight into the electrical degradation of thermally grown SiC-MOS devices.