検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Negative-U system of carbon vacancy in 4H-SiC

4H-SiC中の炭素空孔のネガティブU系

Son, N. T.*; Trinh, X. T.*; L${o}$vile, L. S.*; Svensson, B. G.*; 河原 洸太朗*; 須田 淳*; 木本 恒暢*; 梅田 享英*; 磯谷 順一*; 牧野 高紘; 大島 武; Janz$'e$n, E.*

Son, N. T.*; Trinh, X. T.*; L${o}$vile, L. S.*; Svensson, B. G.*; Kawahara, Kotaro*; Suda, Jun*; Kimoto, Tsunenobu*; Umeda, Takahide*; Isoya, Junichi*; Makino, Takahiro; Oshima, Takeshi; Janz$'e$n, E.*

Nitrogen-doped n-type 4H-Silicon carbide (SiC) epitaxial layers were irradiated with electrons at 250 keV. Carbon vacancy (V$$_{C}$$) signals at both the h and k sites were studied using photoexitation Electron Paramagnetic Resonance (photo-EPR) and Deep Level Transient Spectroscopy (DLTS). As a result, double negative charge states of V$$_{C}$$, showing its negative-U system were revealed. By the direct correlation between EPR and DLTS data, it was concluded that Z$$_{1}$$ is V$$_{C}$$ at h site and Z$$_{2}$$ is V$$_{C}$$ at k site. In addition, we concluded that EH$$_{7}$$ is a single donor level of V$$_{C}$$.

Access

:

- Accesses

InCites™

:

パーセンタイル:2.21

分野:Physics, Multidisciplinary

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.