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Surface effect on ion track formation in amorphous Si$$_{3}$$N$$_{4}$$ films

非晶質Si$$_{3}$$N$$_{4}$$薄膜中でのイオントラック形成に対する表面効果

森田 陽亮*; 中嶋 薫*; 鈴木 基史*; 鳴海 一雅; 齋藤 勇一; 石川 法人; 北條 喜一; 辻本 将彦*; 磯田 正二*; 木村 健二*

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*

Thin films of amorphous Si$$_{3}$$N$$_{4}$$ (thickness 5-30 nm) were irradiated with 360-720 keV C$$_{60}$$$$^{2+}$$ ions in order to investigate ion track formation. Ion tracks were observed with transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The length and the radial density profile of the track were measured for various combinations of the film thickness and the energy of C$$_{60}$$$$^{2+}$$ ions. The length of the ion track produced in a 30-nm film was found shorter than that in a 20-nm film for the same projectile energy, which indicates that there is surface effect on track formation. This can be qualitatively understood in terms of the energy dissipation process. The observed radial density profile also depends on the film thickness: The apparent density reduction increases with decreasing film thickness. The result can be explained by surface cratering.

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パーセンタイル:53.77

分野:Instruments & Instrumentation

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