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Magnetoresistance and Hall effect of antiferromagnetic uranium compound URhIn$$_5$$

ウラン化合物反強磁性体URhIn$$_5$$の磁気抵抗とホール効果

芳賀 芳範; 松本 裕司*; Pospisil, J.; 立岩 尚之; 山本 悦嗣; 山村 朝雄*; Fisk, Z.*

Haga, Yoshinori; Matsumoto, Yuji*; Pospisil, J.; Tateiwa, Naoyuki; Yamamoto, Etsuji; Yamamura, Tomoo*; Fisk, Z.*

Transport characteristics of an antiferromagnetic uranium compound URhIn$$_5$$ are studied. The antiferromagnetic transition leads to a formation of a gap on the Fermi surface as demonstrated by a hump in the resistivity behavior as a function of temperature. Hall effect, magnetoresistance and de Haas-van Alphen study consistently demonstrate a small carrier concentration in the antiferromagnetic state suggesting that majority of the Fermi surface vanishes.

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