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STM-induced SiO$$_{2}$$ decomposition on Si(110)

STMに誘起されたSi(110)上SiO$$_{2}$$の分解

矢野 雅大; 魚住 雄輝*; 保田 諭; 朝岡 秀人; 塚田 千恵*; 吉田 光*; 吉越 章隆

Yano, Masahiro; Uozumi, Yuki*; Yasuda, Satoshi; Asaoka, Hidehito; Tsukada, Chie*; Yoshida, Hikaru*; Yoshigoe, Akitaka

Real-time scanning tunneling microscope (STM) measurements are performed during the thermal decomposition of an oxide layer on Si(110). Voids in which only oxide is removed are formed during the real-time measurements, unlike the thermal decomposition in which bulk Si is desorbed with oxide. Analysis of the STM images reveals that the measurement induces the decomposition of the oxide layer resulting from electron injection into the defect sites. The activation energy of thermal decomposition decreases by 0.4 eV in the range of 700-780$$^{circ}$$C.

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