(Ge
Si
) based on the doniach phase diagram(GeSi)の電子状態伊覇 航*; 屋良 朝之*; 安次富 洋介*; 垣花 将司*; 竹内 徹也*; 本多 史憲*; 仲村 愛*; 青木 大*; 郷地 順*; 上床 美也*; 木田 孝則*; 田原 大夢*; 萩原 政幸*; 芳賀 芳範 
; 辺土 正人*; 仲間 隆男*; 大貫 惇睦*
Iha, Wataru*; Yara, Tomoyuki*; Ashitomi, Yosuke*; Kakihana, Masashi*; Takeuchi, Tetsuya*; Honda, Fuminori*; Nakamura, Ai*; Aoki, Dai*; Gochi, Jun*; Uwatoko, Yoshiya*; Kida, Takanori*; Tahara, Taimu*; Hagiwara, Masayuki*; Haga, Yoshinori; Hedo, Masato*; Nakama, Takao*; Onuki, Yoshichika*
We succeeded in growing single crystals of the series of EuCu(GeSi) compounds.Physical property measurements demonstrate a maximum of the antiferromagnetic transition temperature appears at 
. Antiferromagnetism then disappears around 
followed by a heavy-fermion formation at higher concentrations. These observations follow the Doniach phase diagram as a function of 
.
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巻 |
: | 87 |
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: | 6 |
ページ数 |
: | p.064706_1 - 064706_14 |
発行年月 |
: | 2018/06 |
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- Accesses |
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パーセンタイル：75.67 分野：Physics, Multidisciplinary |
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