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Electronic states of EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$ studied by soft X-ray photoemission spectroscopy

軟X線光電子分光によるEuCu$$_2$$Ge$$_2$$及びEuCu$$_2$$Si$$_2$$の電子状態の研究

川崎 郁斗; 藤森 伸一; 竹田 幸治; 山上 浩志; 伊覇 航*; 辺土 正人*; 仲間 隆男*; 大貫 惇睦*

Kawasaki, Ikuto; Fujimori, Shinichi; Takeda, Yukiharu; Yamagami, Hiroshi; Iha, Wataru*; Hedo, Masato*; Nakama, Takao*; Onuki, Yoshichika*

We have carried out angle-integrated photoemission spectroscopy (AIPES) and angle-resolved photoemission spectroscopy (ARPES) experiments using soft X-rays on single crystals of EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$ grown by the Bridgman method to investigate their electronic structures. The AIPES results showed that the Eu ions in EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$ are in a divalent state and a nearly trivalent state, respectively, in accord with the previously reported magnetic properties. The three-dimensional band structures and shapes of the Fermi surfaces of EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$ were studied by ARPES measurements. We found that the band structures near the Fermi level and Fermi surfaces of EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$ are very different from each other and are well reproduced by the band structure calculations based on density-functional theory for SrCu$$_2$$Ge$$_2$$ and YCu$$_2$$Si$$_2$$. This suggests that a charge transfer from the localized 4$$f$$ states into the valence bands is responsible for the difference in the electronic states between EuCu$$_2$$Ge$$_2$$ and EuCu$$_2$$Si$$_2$$.

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