Electronic states of EuCuGe and EuCuSi studied by soft X-ray photoemission spectroscopy
軟X線光電子分光によるEuCuGe及びEuCuSiの電子状態の研究
川崎 郁斗 ; 藤森 伸一 ; 竹田 幸治 ; 山上 浩志; 伊覇 航*; 辺土 正人*; 仲間 隆男*; 大貫 惇睦*
Kawasaki, Ikuto; Fujimori, Shinichi; Takeda, Yukiharu; Yamagami, Hiroshi; Iha, Wataru*; Hedo, Masato*; Nakama, Takao*; Onuki, Yoshichika*
We have carried out angle-integrated photoemission spectroscopy (AIPES) and angle-resolved photoemission spectroscopy (ARPES) experiments using soft X-rays on single crystals of EuCuGe and EuCuSi grown by the Bridgman method to investigate their electronic structures. The AIPES results showed that the Eu ions in EuCuGe and EuCuSi are in a divalent state and a nearly trivalent state, respectively, in accord with the previously reported magnetic properties. The three-dimensional band structures and shapes of the Fermi surfaces of EuCuGe and EuCuSi were studied by ARPES measurements. We found that the band structures near the Fermi level and Fermi surfaces of EuCuGe and EuCuSi are very different from each other and are well reproduced by the band structure calculations based on density-functional theory for SrCuGe and YCuSi. This suggests that a charge transfer from the localized 4 states into the valence bands is responsible for the difference in the electronic states between EuCuGe and EuCuSi.