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Interface atom mobility and charge transfer effects on CuO and Cu$$_{2}$$O formation on Cu$$_{3}$$Pd(111) and Cu$$_{3}$$Pt(111)

Cu$$_{3}$$Pd(111)およびCu$$_{3}$$Pt(111)表面でのCuOとCu$$_{2}$$Oの生成における界面原子移動度および電荷移動効果

津田 泰孝; Gueriba, J. S.*; 牧野 隆正*; Di$~n$o, W. A.*; 吉越 章隆; 岡田 美智雄*

Tsuda, Yasutaka; Gueriba, J. S.*; Makino, Takamasa*; Di$~n$o, W. A.*; Yoshigoe, Akitaka; Okada, Michio*

We bombarded Cu$$_{3}$$Pd(111) and Cu$$_{3}$$Pt(111) with a 2.3 eV hyperthermal oxygen molecular beam (HOMB) source, and characterized the corresponding (oxide) surfaces with synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS). At 300 K, CuO forms on both Cu$$_{3}$$Pd(111) and Cu$$_{3}$$Pt(111). When we increase the surface temperature to 500 K, Cu$$_{2}$$O also forms on Cu$$_{3}$$Pd(111), but not on Cu$$_{3}$$Pt(111). For comparison, Cu$$_{2}$$O forms even at 300 K on Cu(111). On Cu$$_{3}$$Au(111), Cu$$_{2}$$O forms only after 500 K, and no oxides can be found at 300 K. We ascribe this difference in Cu oxide formation to the mobility of the interfacial species (Cu/Pd/Pt) and charge transfer between the surface Cu oxides and subsurface species (Cu/Pd/Pt).

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