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Modulation of Dirac electrons in epitaxial Bi$$_2$$Se$$_3$$ ultrathin films on van der Waals ferromagnet Cr$$_2$$Si$$_2$$Te$$_6$$

ファンデルワールス強磁性体Cr$$_2$$Si$$_2$$Te$$_6$$上のエピタキシャルBi$$_2$$Se$$_3$$超薄膜におけるディラック電子の変調

加藤 剛臣*; 菅原 克明*; 伊東 直洋*; 山内 邦彦*; 佐藤 匠*; 小口 多美夫*; 高橋 隆*; 塩見 雄毅*; 齊藤 英治; 佐藤 宇史*

Kato, Takemi*; Sugawara, Katsuaki*; Ito, Naohiro*; Yamauchi, Kunihiko*; Sato, Takumi*; Oguchi, Tamio*; Takahashi, Takashi*; Shiomi, Yuki*; Saito, Eiji; Sato, Takafumi*

We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi$$_2$$Se$$_3$$ was epitaxially grown on a van der Waals ferromagnet Cr$$_2$$Si$$_2$$Te$$_6$$ (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in six quintuple-layer (6QL) Bi$$_2$$Se$$_3$$ on CST, whereas the Dirac cone exhibits a gap of 0.37 eV in its 2QL counterpart. Intriguingly, this gap is much larger than those for Bi$$_2$$Se$$_3$$ films on Si(111). We also revealed no discernible change in the gap magnitude across the ferromagnetic transition of CST, suggesting the very small characteristic length and energy scale of the magnetic proximity effect. The present results suggest a crucial role of interfacial coupling for modulating Dirac electrons in topological-insulator hybrids.

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パーセンタイル:17.44

分野:Materials Science, Multidisciplinary

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