Comparison between carrier transport property and crystal quality of TlBr semiconductors

渡辺 賢一*; 須貝 優介*; 長谷川 創大*; 田中 清志朗*; 人見 啓太朗*; 野上 光博*; 篠原 武尚   ; Su, Y. H.  ; Parker, J. D.*; Kockelmann, W.*

Watanabe, Kenichi*; Sugai, Yusuke*; Hasegawa, Sota*; Tanaka, Seishiro*; Hitomi, Keitaro*; Nogami, Mitsuhiro*; Shinohara, Takenao; Su, Y. H.; Parker, J. D.*; Kockelmann, W.*

Thallium bromide (TlBr) semiconductor detectors are being developed as promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. This study presents methods for evaluating TlBr crystal quality and carrier transport characteristics using neutron Bragg-dip imaging and the time-of-flight method for pulsed-laser-induced carriers, respectively. In this study, two samples obtained from both the upstream and downstream region in the crystal ingot were evaluated.