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論文

Dynamical spin-to-charge conversion on the edge of quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

Physical Review Research (Internet), 2(2), p.023195_1 - 023195_11, 2020/05

We theoretically manifest that the edge of a quantum spin Hall insulator (QSHI), attached to an insulating ferromagnet (FM), can realize a highly efficient spin-to-charge conversion. Based on a one-dimensional QSHI-FM junction, the electron dynamics on the QSHI edge is analyzed, driven by a magnetization dynamics in the FM. Under a large gap opening on the edge from the magnetic exchange coupling, we find that the spin injection into the QSHI edge gets suppressed while the charge current driven on the edge gets maximized, demanded by the band topology of the one-dimensional helical edge states.

論文

Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$

角田 一樹*; 鹿子木 将明*; Reimann, J.*; Nurmamat, M.*; 後藤 伸一*; 竹田 幸治; 斎藤 祐児; Kokh, K. A.*; Tereshchenko, O. E.*; G$"u$dde, J.*; et al.

New Journal of Physics (Internet), 21(9), p.093006_1 - 093006_8, 2019/09

 被引用回数:1 パーセンタイル:54.6(Physics, Multidisciplinary)

We systematically investigate the magnetic, structural and electronic properties and the ultrafast carrier dynamics in a series of V-doped Sb$$_{2}$$Te$$_{3}$$ samples of composition Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$ with x = 0, 0.015 and 0.03. Element specific X-ray magnetic circular dichroism signifies that the ferromagnetism of V-doped Sb$$_{2}$$Te$$_{3}$$ is governed by the p-d hybridization between the host carrier and the magnetic dopant. Time- and angle-resolved photoemission spectroscopy has revealed that the V impurity induced states underlying the topological surface state (TSS) add scattering channels that significantly shorten the duration of transient surface electrons down to 100 fs scale. This is in a sharp contrast to the prolonged duration reported for pristine samples though the TSS is located inside the bulk energy gap of the host in either magnetic or non-magnetic cases. It implies the presence of a mobility gap in the bulk energy gap region of the host material.

論文

Negative Te spin polarization responsible for ferromagnetic order in the doped topological insulator V$$_{0.04}$$(Sb$$_{1-x}$$Bi$$_{x}$$)$$_{1.96}$$Te$$_{3}$$

Ye, M.*; Xu, T.*; Li, G.*; Qiao, S.*; 竹田 幸治; 斎藤 祐児; Zhu, S.-Y.*; Nurmamat, M.*; 角田 一樹*; 石田 行章*; et al.

Physical Review B, 99(14), p.144413_1 - 144413_7, 2019/04

 被引用回数:3 パーセンタイル:29.97(Materials Science, Multidisciplinary)

We investigate the microscopic origin of ferromagnetism coupled with topological insulators in V-doped (Sb,Bi)$$_{2}$$Te$$_{3}$$ employing X-ray magnetic circular dichroism and angle-resolved two-photon photoemission spectroscopies, combined with first-principles calculations. We found an magnetic moment at the Te site anti-parallel to that of the V and Sb sites, which plays a key role in the ferromagnetic order. We ascribe it to the hybridization between Te 5${it p}$ and V 3${it d}$ majority spin states at the Fermi energy, consistent with the Zener-type ${it p}$-${it d}$ exchange interaction scenario. The substitution of Bi for Sb suppresses the bulk ferromagnetism by introducing extra electron carriers in the majority spin channel of the Te ${it p}$ states that compensates the antiparallel magnetic moment on the Te site. Our findings reveal important clues to designing magnetic topological insulators with higher Curie temperature that work under ambient conditions.

論文

Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

Shikin, A. M.*; Estyunin, D. A.*; Surnin, Yu. I.*; Koroleva, A. V.*; Shevchenko, E. V.*; Kokh, K. A.*; Tereshchenko, O. E.*; Kumar, S.*; Schwier, E. F.*; 島田 賢也*; et al.

Scientific Reports (Internet), 9(1), p.4813_1 - 4813_17, 2019/03

 被引用回数:2 パーセンタイル:42.97(Multidisciplinary Sciences)

A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs), Bi$$_{1.09}$$Gd$$_{0.06}$$Sb$$_{0.85}$$Te$$_{3}$$, has been studied by angle-resolved photoemission, superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD). It has been shown that this TI is characterized by the Dirac gap at the Fermi level. In the paramagnetic phase, a surface magnetic layer is supposed to develop, where the coupling between the Gd magnetic moments is mediated by the topological surface states (TSSs). This assumption can be confirmed by opening a gap at the Dirac point indicated by the surface-sensitive ARPES, a weak hysteresis loop measured by SQUID, the XMCD showing a surface magnetic moment and the temperature dependence of electrical resistance demonstrating a mid-gap semiconducting behavior, which correlates with the temperature dependence of the surface magnetization and confirms the conclusion that only TSSs are located at the Fermi level.

論文

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)$$_{2}$$Te$$_{3}$$

Ye, M.*; Li, W.*; Zhu, S.-Y.*; 竹田 幸治; 斎藤 祐児; Wang, J.*; Pan, H.*; Nurmamat, M.*; 角田 一樹*; Ji, F.*; et al.

Nature Communications (Internet), 6, p.8913_1 - 8913_7, 2015/11

AA2015-0647.pdf:0.64MB

 被引用回数:28 パーセンタイル:12.62(Multidisciplinary Sciences)

磁性元素を添加したトポロジカル絶縁体は、量子異常ホール効果や無散逸伝導などの魅力的な現象の発現が予言され、低消費電力スピンデバイスの開発につながっていくものと期待されている。既に、いくつかの磁性添加トポロジカル絶縁体で長距離磁気秩序が確認されている。しかし、量子異常ホール効果の発現は、極低温におけるCrを添加した(Sb,Bi)$$_{2}$$Te$$_{3}$$系に限られており、強磁性の微視的な起源はほとんど分かっていない。そこで、今回、X線磁気円二色性実験による元素選択的研究を行うことにより、本物質系の強磁性は、母体の正孔キャリアーを媒介としたものであり、Crの3d電子とSbやTeのp電子の相互作用が極めて重要であることを明らかにした。この結果は、異常量子ホール素子の実現に向けても重要である。

口頭

スピン偏極陽電子ビームによるBi系トポロジカル絶縁体の電流誘起スピン蓄積効果の研究

河裾 厚男; Li, H.; 前川 雅樹; 阿部 浩之; 宮下 敦巳

no journal, , 

トポロジカル絶縁体の表面では、カイラルスピン構造が形成されており、運動量とスピンの方向が常に垂直に保たれている。そこで、表面平行方向に電流を印加することで、表面電子がスピン偏極することが考えられる。しかし、バンドギャップが非常に狭いことや、電気的に活性な固有欠陥の生成などにより、バルクの絶縁状態が保持されているとは限らず、表面電気伝導をバルクから分離して観測することは容易ではない。本研究では、表面電子スピンを高感度に捉えることができるスピン偏極陽電子ビームを用いて、トポロジカル絶縁体の一つとされているBi$$_{1-x}$$Sb$$_{x}$$表面の電流誘起スピン偏極を観測した。その結果、Sb組成比がトポロジカル絶縁相のx=0.06-0.2になるとスピン偏極率は4-5%となり、さらにSb組成比x$$>$$0.22では、表面電子のスピン偏極率は検出限界以下であった。これらはトポロジカル絶縁相の発現と消失に対応している可能性がある。

口頭

Dissipative spin pumping in two-dimensional quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

no journal, , 

We present our theoretical work on spin pumping into a two-dimensional (2D) quantum spin Hall inslator (QSHI). Recent theories and experiments have demonstrated the QSHI phase in a monolayer of transition metal dichalcogenide 1T'-WTe2, which can be easily engineered in contrast to traditionally-known HgTe/CdTe and InAs/GaSb quantum wells. While the theory of spin pumping is well established in normal metals by focusing on the spin-dependent electron scattering at the interface, it is unreliable for topologically nontrivial interfaces in such systems. In the present work, we consider a junction of a ferromagnet and a 2D QSHI at its 1D edge, and demonstrate the pumping of angular momentum from the spin-precessing ferromagnet into the QSHI. Using the Floquet theory for the electrons on the helical edge states, we analytically show that the time-periodic precession of the magnetization drives a charge current on the edge, for the whole range of precession frequency. This edge current can be regarded as a consequence of the inverse spin Hall effect intrinsic to the QSHI, which converts the injected spin current into a transverse charge current. By varying the precession frequency of the magnetization and the coupling strength at the junction, we find a clear crossover between two regimes: the adiabatic regime, where the slow magnetization precession drives a quantized pumping, and the resonant regime, where the fast precession leads to a suppressed pumping. We also incorporate the effect of orbital dependence in the exchange coupling at the edge, and show numerically that it shifts the crossover point between the adiabatic and resonant regimes.

口頭

Dissipative spin pumping into two-dimensional quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

no journal, , 

The two-dimensional quantum spin Hall insulator (2D QSHI) is the most primitive but quite important realization of topological insulator. It shows the helical edge states protected by time-reversal symmetry, whereas the quantized spin Hall conductivity in the bulk. In the present work, we theoretically investigate the spin pumping from a precessing ferromagnet into a 2D QSHI thoroughly from the adiabatic to nonadiabatic regimes, both analytically and numerically. We analytically treat the dynamics of the edge-state electrons coupled to the precessing ferromagnet by the Floquet theory, and derive the pumped current as a function of the exchange energy and the precession frequency. We find that a heat bath for the edge electrons governs the transition between the adiabatic and nonadiabatic regime: when the edge electrons are coupled with a heat bath, their spin and energy can dissipate into the bath by a certain rate, eventually reaching a periodic steady state. The pumped current on the becomes quantized when the exchange energy exceeds the dissipation rate. We also calculate the edge current numerically on the 2D lattice model, and find that the bulk states in the QSHI effectively serves as the heat bath for the edge electrons.

口頭

Adiabatic and resonant spin pumping in two-dimensional quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

no journal, , 

We present our theoretical work on spin pumping into a two-dimensional (2D) quantum spin Hall inslator (QSHI). QSHI is a topological insulator in 2D exhibiting gapless helical edge stats, which are responsible for the quantized spin Hall conductivity. Recent theories and experiments have demonstrated the QSHI phase in a monolayer of transition metal dichalcogenide 1T'-WTe2, which can be easily engineered in contrast to traditionally-known HgTe/CdTe and InAs/GaSb quantum wells. While the theory of spin pumping is well established in normal metals by focusing on the spin-dependent electron scattering at the interface, it is unreliable for topologically nontrivial interfaces in such systems. In the present work, we consider a junction of a ferromagnet and a 2D QSHI at its 1D edge, and demonstrate the pumping of angular momentum from the spin-precessing ferromagnet into the QSHI. Using the Floquet theory for the electrons on the helical edge states, we analytically show that the time-periodic precession of the magnetization drives a charge current on the edge, for the whole range of precession frequency. This edge current can be regarded as a consequence of the inverse spin Hall effect intrinsic to the QSHI, which converts the injected spin current into a transverse charge current. By varying the precession frequency of the magnetization and the coupling strength at the junction, we find a clear crossover between two regimes: the adiabatic regime, where the slow magnetization precession drives a quantized pumping, and the resonant regime, where the fast precession leads to a suppressed pumping. We also incorporate the effect of orbital dependence in the exchange coupling at the edge, and show numerically that it shifts the crossover point between the adiabatic and resonant regimes.

口頭

Spin-to-charge conversion on the edge of quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

no journal, , 

We present our theoretical work on dynamical spin-to-charge conversion at the edge of a quantum spin Hall insulator (QSHI), namely a two-dimensional topological insulator with helical edge states. Interconversion between spin- and charge-related quantities has been a key idea in making use of magnetic materials, especially in the context of spintronics. QSHI is a typical system showing a universal charge-to-spin conversion behavior, namely the quantum spin Hall effect, whereas the spin-to-charge conversion therein is still not clearly understood. At a lateral heterojunction of a ferromagnet (FM) and a QSHI, it has been theoretically demonstrated that magnetization dynamics induces a charge current along the edge of QSHI; however, its mechanism from the viewpoint of spin-to-charge conversion still remains to be clarified. In order to understand the spin transfer and the spin-to-charge conversion mechanism in QSHI, we investigate the many-body dynamics of the electrons under the magnetization dynamics at the QSHI-FM junction. We analytically treat the electron dynamics in terms of the Floquet-Keldysh formalism, and compare two physical quantities present on the edge: the spin injection rate from the FM into the QSHI, and the charge current induced along the edge. Whereas the edge current seen in the previous works is reproduced, we find that it is not proportional to the spin injection rate, especially when the exchange interaction at the junction is strong enough. This relation implies that the spin-to-charge conversion in this system cannot be considered as the inverse spin Hall effect, while it can be rather seen as the inverse Edelstein effect, in which an electron spin accumulation at the junction is converted to a charge current. We also focus on the energy transfer at the junction, and interpret this phenomenon in terms of magnon exchange.

口頭

Spin-to-charge conversion on the edge of quantum spin Hall insulator

荒木 康史; 三澤 貴宏*; 野村 健太郎*

no journal, , 

We present our theoretical work on dynamical spin-to-charge conversion at the edge of a quantum spin Hall insulator (QSHI), namely a two-dimensional topological insulator with helical edge states. Interconversion between spin- and charge-related quantities has been a key idea in making use of magnetic materials, especially in the context of spintronics. QSHI is a typical system showing a universal charge-to-spin conversion behavior, namely the quantum spin Hall effect, whereas the spin-to-charge conversion therein is still not clearly understood. We here investigate the many-body dynamics of the electrons under the magnetization dynamics at the QSHI-ferromagnet (FM) junction. We analytically treat the electron dynamics in terms of the Floquet-Keldysh formalism, and compare the spin injection rate from the FM into the QSHI and the charge current induced along the edge. Whereas the edge current seen in the previous works is reproduced, we find that it is not proportional to the spin injection rate, especially when the exchange interaction at the junction is strong enough. This relation implies that the spin-to-charge conversion in this system cannot be considered as the inverse spin Hall effect, while it can be rather seen as the inverse Edelstein effect.

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