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Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

Gdをドープした反強磁性トポロジカル絶縁体におけるディラックギャップの生成とディラックフェルミ粒子が媒介した磁気結合とその放射光による操作

Shikin, A. M.*; Estyunin, D. A.*; Surnin, Yu. I.*; Koroleva, A. V.*; Shevchenko, E. V.*; Kokh, K. A.*; Tereshchenko, O. E.*; Kumar, S.*; Schwier, E. F.*; 島田 賢也*; 吉川 智己*; 斎藤 祐児; 竹田 幸治; 木村 昭夫*

Shikin, A. M.*; Estyunin, D. A.*; Surnin, Yu. I.*; Koroleva, A. V.*; Shevchenko, E. V.*; Kokh, K. A.*; Tereshchenko, O. E.*; Kumar, S.*; Schwier, E. F.*; Shimada, Kenya*; Yoshikawa, Tomoki*; Saito, Yuji; Takeda, Yukiharu; Kimura, Akio*

A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs), Bi$$_{1.09}$$Gd$$_{0.06}$$Sb$$_{0.85}$$Te$$_{3}$$, has been studied by angle-resolved photoemission, superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD). It has been shown that this TI is characterized by the Dirac gap at the Fermi level. In the paramagnetic phase, a surface magnetic layer is supposed to develop, where the coupling between the Gd magnetic moments is mediated by the topological surface states (TSSs). This assumption can be confirmed by opening a gap at the Dirac point indicated by the surface-sensitive ARPES, a weak hysteresis loop measured by SQUID, the XMCD showing a surface magnetic moment and the temperature dependence of electrical resistance demonstrating a mid-gap semiconducting behavior, which correlates with the temperature dependence of the surface magnetization and confirms the conclusion that only TSSs are located at the Fermi level.

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パーセンタイル:100

分野:Multidisciplinary Sciences

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