検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Real-time observation of initial thermal oxidation on Si(110)-16$$times$$2 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

放射光を用いたO 1s光電子分光によるSi(110)-16$$times$$2表面初期熱酸化のリアルタイム観察

末光 眞希*; 加藤 篤*; 富樫 秀晃*; 今野 篤史*; 山本 喜久*; 寺岡 有殿; 吉越 章隆 ; 成田 克*; 遠田 義晴*

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*

リアルタイムX線光電子分光法を用いてSi(110)の所期酸化が調べられた。O 1s光電子スペクトルの時間発展はわずかに1.5L相当の酸素導入によっても急速に酸化が進むことを示した。最初の酸化は比較的小さい結合エネルギー成分が主であるが、徐々に比較的大きな結合エネルギー成分に置き換わる。従来知られているSi(111)のドライ酸化のO 1s光電子スペクトルと比較して、Si(110)-16$$times$$2表面のアドアトムかその周辺で酸化が起こると推察される。

Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.33$$times$$10$$^{-4}$$ Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-16$$times$$2 clean surface as a likely oxidation state for this low-binding-energy peak.

Access

:

- Accesses

InCites™

:

パーセンタイル:46.58

分野:Physics, Applied

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.