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Preparation of submicron copper wires in ion track-etched membranes of thermally stable polyimide; Effect of electrodeposition temperature on their morphology

耐熱性ポリイミドイオン穿孔膜/銅ナノ細線ハイブリット膜の作製; 銅細線の表面形態への析出温度効果

越川 博; 浅野 雅春; 八巻 徹也; 吉田 勝; 前川 康成

Koshikawa, Hiroshi; Asano, Masaharu; Yamaki, Tetsuya; Yoshida, Masaru; Maekawa, Yasunari

高分子薄膜に重イオンビーム照射後、化学処理を行うことで、膜厚に対する孔径が小さく孔径分布が狭い円筒状の微細孔を有するイオン穿孔膜が作製できる。ポリイミド(PI)膜(膜厚12$$mu$$m)に、$$^{129}$$Xe$$^{23+}$$(450MeV)をフルエンス3$$times$$10$$^{5-7}$$ion/cm$$^{2}$$で照射し、続いて60$$^{circ}$$Cの次亜塩素酸ナトリウム水溶液でエッチングして、孔径0.5-2.0$$mu$$mのPI穿孔を構築した。膜の片面に銅(20$$mu$$m)を積層させて電極とし、室温,50$$^{circ}$$C及び80$$^{circ}$$Cの各温度でpH1, 1.3M硫酸銅水溶液中に周期的に変調(-0.2V;6秒間, 0.1V;1秒間)した電位で電気メッキした。銅細線の形状について、60$$^{circ}$$Cの次亜塩素酸ナトリウム溶液でPI膜を除去した後、SEMで観察した。室温及び50$$^{circ}$$Cで作製した銅細線はその細線表面に銅の粒子が存在した。また、80$$^{circ}$$Cの高温では粒子は観られず、滑らかな表面形状を示し、作製時の温度依存性が明らかになった。この結果から、結晶子間の界面抵抗の小さな高導電性の銅ナノ細線が期待できる。

Polyimide (PI) films (thickness: 12 $$mu$$m) were irradiated by 450 MeV $$^{129}$$Xe$$^{23+}$$ with fluences of 3$$times$$10$$^{5-7}$$ ions/cm$$^{2}$$. The PI ion track membranes with 0.5 $$mu$$m diameter cylindrical pores were prepared by etching in a sodium hypochlorite solution at 60$$^{circ}$$C. The Cu wires were deposited within the pores of the ion track membranes by electrochemical plating in a aqueous solution of copper sulfate with periodic potential modulation (-0.2 V; 6 sec, 0.2 V; 1 sec). The deposition temperature was controlled at room temperature, 50 and 80$$^{circ}$$C. The geometry of the wires removed PI was estimated by SEM observation. The formations of the Cu wires at room temperature and 50$$^{circ}$$C deposition temperature consist of loosely assembled with small grains. The wire surface appeared to be smooth at 80$$^{circ}$$C deposition temperature. The Cu$$^{2+}$$ mobility at low temperatures is probably too low to keep up with the wire growth occurring within the pores.

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