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放射光XPSによるSiO$$_{2}$$/4H-SiC構造の伝導帯オフセット評価

Determination of SiO$$_{2}$$/4H-SiC conduction band offset by SR-XPS

桐野 嵩史*; 景井 悠介*; 岡本 学*; Harries, J.; 吉越 章隆 ; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; 細井 卓治*; 志村 考功*; 渡部 平司*

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

4H-SiC基板上に形成した熱酸化SiO$$_{2}$$/SiC構造は、水素を導入することにより界面特性が向上する一方で、基板面方位によっては信頼性が劣化することが知られている。そこで、4H-SiC(000-1)C面及び(0001)Si面基板上に形成した熱酸化SiO$$_{2}$$/SiCについて、高温水素ガスアニールを施す前後でのエネルギーバンド構造を評価するため、放射光XPSによりO1sエネルギー損失スペクトルからSiO$$_{2}$$のバンドギャップを、価電子帯スペクトルよりSiO$$_{2}$$/SiC価電子帯オフセットを算出した。その結果、(000-1)C面上に形成した酸化膜の伝導帯オフセットは水素ガスアニールにより0.1eV減少することがわかった。

It has been reported that hydrogen incorporation into thermally grown SiO$$_{2}$$/4H-SiC structures not only improves the interface quality, but also degrades the gate oxide reliability depending on SiC surface orientation. In this study, energy band diagrams of thermally grown SiO$$_{2}$$/4H-SiC(0001) and SiO$$_{2}$$/4H-SiC(000-1) structures with and without high-temperature hydrogen annealing were evaluated by synchrotron radiation X-ray photoelectron spectroscopy. The SiO$$_{2}$$ band gap and valence band offset at SiO$$_{2}$$/SiC interface were extracted from O 1s energy loss spectra and valence band spectra, respectively. The obtained energy band diagrams revealed that conduction band offsets at SiO$$_{2}$$/SiC interfaces were decreased after the hydrogen annealing especially for 4H-SiC(000-1) substrates. This is one possible reason for the reliability degradation of 4H-SiC metal-oxide-semiconductor devices by hydrogen incorporation.

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