Temperature dependence of O adsorption reaction path on Si(001) and Si(111); Photoelectron spectroscopy observations and DVX calculations

Si(001)とSi(111)面上でのO吸着反応過程の温度依存性; 光電子分光観察とDVX計算

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆 ; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

Tang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Watanabe, Daiki*; Teraoka, Yuden; Takakuwa, Yuji*

In this study, the uptake curve and adsorption state of adsorbed oxygen on Si(111)77 and Si(001)21 surfaces was investigated as a function of temperature by real-time photoelectron spectroscopy using He-I resonance line at Tohoku University and synchrotron radiation at BL23SU, SPring-8 to clarify the initial reaction path of O on Si. When increasing temperature from 300 K to 873 K in the Langmuir-type adsorption region, the saturation amount of oxygen was increased 2.9 times on Si(111) whereas such an increase was only 1.3 times on Si(001). On the other hand, the initial sticking coefficient on the Si(111) surface decreased down to 21% although it remained almost unchanged on Si(001). To reveal the reason for the significant difference of the initial oxide growth kinetics between Si(001) and Si(111), curve-fitting analysis of O1s spectra was performed and the adsorbed oxygen configurations were determined in comparison with the DVX calculations.