ポリフッ化ビニリデン膜の潜在飛跡エッチングによる穿孔形成; コンダクトメトリーにおける印加電圧依存性

Pore formation by track etching of poly(vinylidene fluoride) films; Dependence on applied voltages during conductometric analysis

八巻 徹也; Nuryanthi, N.*; 越川 博; 澤田 真一; 浅野 雅春; 前川 康成; 勝村 庸介*

Yamaki, Tetsuya; Nuryanthi, N.*; Koshikawa, Hiroshi; Sawada, Shinichi; Asano, Masaharu; Maekawa, Yasunari; Katsumura, Yosuke*

フッ素系高分子の一種であるポリフッ化ビニリデン(PVDF)からなるイオン穿孔膜の形成挙動に関する研究において、コンダクトメトリー時の測定セルへの印加電圧が及ぼす影響を検討した。孔貫通に至るまでの化学エッチングだけでなく、貫通後の孔成長(孔径増大速度)についても、セル電圧を高く維持することによって大きく加速されるという現象を見いだした。これによって、潜在飛跡のエッチングが完了するのに要する時間が半分近くまで短縮することができた。

A poly(vinylidene fluoride) film irradiated with 450 MeV Xe ions was etched in an aqueous potassium hydroxide solution at 80C in a conductometric cell. The etching characteristics were investigated in situ at different applied voltages. The conductometric curves reached a plateau when the etching time was sufficiently long (up to 48 h); this plateau indicates that etching was complete in the damaged track and that the bulk etch rate was negligibly low. The applied voltage produced larger pores than the etching with no voltage. Higher voltages shortened the etching time; the voltage accelerated the etching before the pore breakthrough and during the pore growth. The increase in the etch rate was probably caused by the dissolved etching products being pulled away from the pores more efficiently at higher applied voltages.