Comparison of the oxidation reaction kinetics between SiO/n- and p-Si(001) interfaces

SiO/n-およびp-Si(001)界面における酸化反応キネティクスの比較

津田 泰孝   ; 小川 修一*; 吉越 章隆 ; 坂本 徹哉; 高桑 雄二*

Tsuda, Yasutaka; Ogawa, Shuichi*; Yoshigoe, Akitaka; Sakamoto, Tetsuya; Takakuwa, Yuji*

Si oxidation reaction rates depend on not only temperature and O pressure, but also light irradiation and carrier concentration. To interpret all phenomena regarding Si oxidation comprehensively, a unified Si oxidation reaction model mediated by point defect generation has been proposed, where carrier trapping at the vacancy site plays a key role to promote O dissociative adsorption at the SiO/Si interface. In this study, the oxidation reaction kinetics has been compared between p- and n-Si(001) surfaces to clarify the effect of carrier trapping on the SiO growth.