Large spontaneous Hall effect with flexible domain control in the antiferromagnetic material TaMnP

反強磁性体TaMnPにおける柔軟なドメイン制御による大きな自発ホール効果

小手川 恒*; 中村 彰良*; Huyen, V. T. N.*; 新井 祐樹*; 藤 秀樹*; 菅原 仁*; 林 純一*; 武田 圭生*; 田端 千紘; 金子 耕士   ; 樹神 克明   ; 鈴木 通人*

Kotegawa, Hisashi*; Nakamura, Akira*; Huyen, V. T. N.*; Arai, Yuki*; To, Hideki*; Sugawara, Hitoshi*; Hayashi, Junichi*; Takeda, Keiki*; Tabata, Chihiro; Kaneko, Koji; Kodama, Katsuaki; Suzuki, Michito*

In this study, we show that the orthorhombic system TaMnP exhibits a large anomalous Hall conductivity (AHC) in spite of the small net magnetization. Neutron scattering experiment and the observation of the AH effect comprehensively suggest a dominant AF structure in TaMnP is represented by . The AHC is one of the largest among those observed in AF materials at zero fields. First-principles calculations suggest that the spin-orbit interaction originating in nonmagnetic Ta-5 electrons significantly contributes to the enhancement of Berry curvatures in the momentum space. We found that the AF domain switching is triggered by the magnetic fields along all the crystal axes. This indicates that the AF domain determining the sign of the Hall response can be controlled even through the small net magnetization symmetrically different.