※ 半角英数字
 年 ~ 
検索結果: 53 件中 1件目~20件目を表示


Initialising ...



Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...


Initialising ...



Structure analysis and derivation of deformed electron density distribution of polydiacetylene giant single crystal by the combination of X-ray and neutron diffraction data

田代 孝二*; 日下 勝弘*; 細谷 孝明*; 大原 高志; 塙坂 真*; 吉澤 功徳*; 山元 博子*; 新村 信雄*; 田中 伊知朗*; 栗原 和男*; et al.

Macromolecules, 51(11), p.3911 - 3922, 2018/06

 被引用回数:2 パーセンタイル:80.82(Polymer Science)

The crystal structure of polydiacetylene giant single crystal has been analyzed on the basis of the two different methods of wide-angle neutron diffraction and X-ray diffraction. The X-ray result gives us the total electron density distribution. The neutron result tells the positions of atomic nuclei. As a result, the so-called bonded (or deformed) electron density, i.e., the electron density distribution due to the conjugation among the covalently bonded atoms along the polymer chain, can be estimated using the two information. The present report is the first example of the application of X-N method to the synthetic polymer species.


Radionuclide release to stagnant water in the Fukushima-1 Nuclear Power Plant

西原 健司; 山岸 功; 安田 健一郎; 石森 健一郎; 田中 究; 久野 剛彦; 稲田 聡; 後藤 雄一

Journal of Nuclear Science and Technology, 52(3), p.301 - 307, 2015/03

 被引用回数:11 パーセンタイル:18.6(Nuclear Science & Technology)




田代 孝二*; 塙坂 真*; 山元 博子*; Wasanasuk, K.*; Jayaratri, P.*; 吉澤 功徳*; 田中 伊知朗*; 新村 信雄*; 日下 勝弘*; 細谷 孝明*; et al.

高分子論文集, 71(11), p.508 - 526, 2014/11

 被引用回数:5 パーセンタイル:74.44(Polymer Science)



Magnetic structures of FeTiO$$_3$$-Fe$$_2$$O$$_3$$ solid solution thin films studied by soft X-ray magnetic circular dichroism and ab initio multiplet calculations

北條 元*; 藤田 晃司*; 池野 豪一*; 的場 智彦*; 溝口 照康*; 田中 功*; 中村 哲也*; 竹田 幸治; 岡根 哲夫; 田中 勝久*

Applied Physics Letters, 104(11), p.112408_1 - 112408_5, 2014/03


 被引用回数:5 パーセンタイル:70.65(Physics, Applied)

The solid solutions between ilmenite and hematite have recently attracted considerable attention as a spintronic material due to their interesting magnetic and electrical properties. In this study, the electronic and magnetic structures of epitaxially grown ilmenite-hematite solid solution thin films were investigated by combining X-ray absorption near-edge structure (XANES), X-ray magnetic circular dichroism (XMCD) for two different crystallographic projections, and first-principles theoretical calculations.



田中 亮平*; 秀島 伊織*; 箕浦 佑也*; 吉越 章隆; 寺岡 有殿; 細井 卓治*; 志村 考功*; 渡部 平司*

第19回ゲートスタック研究会予稿集, p.5 - 8, 2014/01

It has recently been demonstrated an excellent Ge-MOSFET operation with an EOT of 0.76 nm using HfO$$_{2}$$/Al$$_{2}$$O$$_{3}$$/GeO$$_{x}$$/Ge gate stack. However, the role of Al$$_{2}$$O$$_{3}$$ layer in high-$$k$$/Ge stack is not well understood. In this work, we systematically investigated an effect of AlO$$_{x}$$ interlayer on thermal stability and EOT scaling focusing on the Ge diffusion into an overlying HfO$$_{2}$$ layer by means of X-ray photoelectron spectroscopy (XPS) and electrical characterization. It was found that ultrathin AlO$$_{x}$$ interlayer effectively suppresses the metal germanate formation in the high-$$k$$/Ge stack, thus obtaining good electrical properties. An EOT of 0.56 nm with significantly reduced gate leakage was successfully obtained for Pt/HfO$$_{2}$$/AlO$$_{x}$$/GeO$$_{x}$$/Ge gate stack.


Ge diffusion and bonding state change in metal/high-$$k$$/Ge gate stacks and its impact on electrical properties

細井 卓治*; 秀島 伊織*; 田中 亮平*; 箕浦 佑也*; 吉越 章隆; 寺岡 有殿; 志村 考功*; 渡部 平司*

Microelectronic Engineering, 109, p.137 - 141, 2013/09

 被引用回数:11 パーセンタイル:40.55(Engineering, Electrical & Electronic)

Ge diffusion and chemical bonding states in metal/high-$$k$$/Ge gate stacks were investigated by synchrotron photoemission spectroscopy to understand their impact on electrical properties. Although Hf germanide was found in HfO$$_{2}$$/GeO$$_{x}$$/Ge gate stacks, such germanide could be fully oxidized by using plasma-assisted oxidation. However, Al electrode on HfO$$_{2}$$/GeO$$_{x}$$/Ge stacks reduced interfacial GeO$$_{x}$$ layer, resulting in the formation of Al germanide at the Al/HfO$$_{2}$$ interface. No germanide was formed in the stacks with inert Pt electrode, suggesting the Al layer may promote upward diffusion of GeO molecules through the HfO$$_{2}$$ layer. Hf germanide was formed near the HfO$$_{2}$$/GeO$$_{x}$$ interface probably due to Ge intermixing with the HfO$$_{2}$$ layer in the Pt-gate stacks, in contrast to the enhanced formation of Al germanide in Al-gate stacks. The formation of metal germanide led to severe degradation of insulating properties in metal/high-$$k$$/Ge stacks.



細井 卓治*; 秀島 伊織*; 箕浦 佑也*; 田中 亮平*; 吉越 章隆; 寺岡 有殿; 志村 考功*; 渡部 平司*

信学技報, 113(87), p.19 - 23, 2013/06

高性能Geデバイスの実現には、1nm以下のSiO$$_{2}$$換算膜厚(Equivalent Oxide Thickness: EOT)と良好な界面特性を両立するmetal/high-$$k$$ゲートスタック技術の確立が不可欠である。high-$$k$$/Geゲートスタックの特性劣化の要因として、high-$$k$$膜形成や熱処理工程におけるGeO$$_{x}$$界面層の意図しない形成や分解、Ge原子のhigh-$$k$$膜中への拡散が指摘されているが、その詳細はわかっていない。そこで本研究では、真空中で連続して作製したmetal/HfO$$_{2}$$/GeO$$_{x}$$/Geスタックの熱的構造変化を光電子分光法によりその場分析することで、ジャーマナイド形成やGeO$$_{x}$$層の還元反応を詳細に評価するとともに、電気特性との相関を調べた。室温であってもGe基板上の金属HfはHfジャーマナイドを形成し、HfO$$_{2}$$膜上へのAl堆積はGeO$$_{x}$$界面層を還元してAlジャーマナイドを形成することがわかった。優れた電気特性の実現にはこれらのジャーマナイド形成を回避することが重要であり、そのためにはHfO$$_{2}$$膜形成には酸化力の強いプラズマ酸化を行い、ゲート電極には反応性の低い金属を用いることが有効である。


高速炉におけるガス巻込み現象の防止基準,1; 数値解析によるガス巻込み現象再現精度の検証

大島 宏之; 田中 伸厚*; 江口 譲*; 西村 元彦*; 功刀 資彰*; 内堀 昭寛; 伊藤 啓; 堺 公明

日本原子力学会和文論文誌, 11(4), p.316 - 328, 2012/12



幌延深地層研究計画; 平成23年度調査研究成果報告

中山 雅; 天野 健治; 常盤 哲也; 山本 陽一; 大山 卓也; 天野 由記; 村上 裕晃; 稲垣 大介; 津坂 仁和; 近藤 桂二; et al.

JAEA-Review 2012-035, 63 Pages, 2012/09





西原 健司; 山岸 功; 安田 健一郎; 石森 健一郎; 田中 究; 久野 剛彦; 稲田 聡; 後藤 雄一

日本原子力学会和文論文誌, 11(1), p.13 - 19, 2012/03



Low-threshold ablation of dielectrics irradiated by picosecond soft X-ray laser pulses

Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V. V.*; Khokhlov, V. A.*; 西原 功修*; 加藤 義章*; 田中 桃子; Pikuz, T. A.*; 岸本 牧; 石野 雅彦; et al.

Applied Physics Letters, 94(23), p.231107_1 - 231107_3, 2009/06

 被引用回数:41 パーセンタイル:16.73(Physics, Applied)

Ablation of LiF crystal by soft X-ray laser pulses with wavelength 13.9 nm and duration 7 ps is studied experimentally and theoretically. It is found that a crater appears on a surface of LiF for XRL fluence, exceeding the ablation threshold 10.2 mJ/cm$$^{2}$$ in one shot, or 5 mJ/cm$$^{2}$$ in each of the three XRL shots. This is substantially below the ablation thresholds obtained with other lasers having longer pulse duration and/or longer wavelength. A new mechanism of thermomechanical ablation in large bandgap dielectrics is proposed. The theory explains the low ablation threshold via small attenuation depth, absence of light reflection, and electron heat conductivity.


「数値解析による自由液面からのガス巻込み評価指針」の解説, 解説B(協力研究)

大島 宏之; 堺 公明; 上出 英樹; 木村 暢之; 江連 俊樹; 内堀 昭寛; 伊藤 啓; 功刀 資彰*; 岡本 孝司*; 田中 伸厚*; et al.

JAEA-Research 2008-049, 44 Pages, 2008/06




Local electronic structure of Cr in the II-VI diluted ferromagnetic semiconductor Zn$$_{1-x}$$Cr$$_x$$Te

小林 正起*; 石田 行章*; Hwang, J. I.*; Song, G. S.*; 藤森 淳; Yang, C. S.*; Lee, L.*; Lin, H.-J.*; Huang, D.-J.*; Chen, C. T.*; et al.

New Journal of Physics (Internet), 10, p.055011_1 - 055011_15, 2008/05

 被引用回数:11 パーセンタイル:39.82(Physics, Multidisciplinary)

The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$$_{1-x}$$Cr$$_x$$Te ($$x$$=0.03 and 0.15) thin films has been investigated using X-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). The line shape of the Cr $$2p$$ XMCD spectra is independent of $$H$$, $$T$$, and $$x$$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicates that the ferromagnetic XMCD signal is originated from Cr ions substituted for the Zn site. The Cr $$3d$$ partial density of states extracted using Cr $$2p to 3d$$ resonant PES shows a broad feature near the top of the valence band, suggesting strong $$s$$,$$p$$-$$d$$ hybridization. Based on these findings, we conclude that double exchange mechanism cannot explain the ferromagnetism in Zn$$_{1-x}$$Cr$$_{x}$$Te.


Time evolution of palladium structure change with redox fluctuations in a LaFePdO$$_{3}$$ perovskite automotive catalyst by high-speed analysis with in situ DXAFS

上西 真里*; 田中 裕久*; 谷口 昌司*; 丹 功*; 西畑 保雄; 水木 純一郎; 小林 哲彦*

Catalysis Communications, 9(2), p.311 - 314, 2008/02

 被引用回数:30 パーセンタイル:35.88(Chemistry, Physical)



Self-regenerating Rh- and Pt-based perovskite catalysts for automotive-emissions control

田中 裕久*; 谷口 昌司*; 上西 真里*; 梶田 伸彦*; 丹 功*; 西畑 保雄; 水木 純一郎; 成田 慶一*; 木村 希夫*; 金子 公良*

Angewandte Chemie; International Edition, 45(36), p.5998 - 6002, 2006/09

 被引用回数:122 パーセンタイル:7.72(Chemistry, Multidisciplinary)



The Intelligent catalyst having the self-regenerative function of Pd, Rh and Pt for automotive emissions control

田中 裕久*; 上西 真里*; 谷口 昌司*; 丹 功*; 成田 慶一*; 木村 希夫*; 金子 公良*; 西畑 保雄; 水木 純一郎

Catalysis Today, 117(1-3), p.321 - 328, 2006/09

 被引用回数:162 パーセンタイル:2.07(Chemistry, Applied)



The Intelligent catalyst; Pd-perovskite having the self-regenerative function in a wide temperature range

田中 裕久*; 丹 功*; 上西 真里*; 谷口 昌司*; 西畑 保雄; 水木 純一郎

Key Engineering Materials, 317-318, p.827 - 832, 2006/08



The Self-regenerative "intelligent" catalyst for automotive emissions control

丹 功*; 谷口 昌司*; 田中 裕久*; 上西 真里*; 梶田 伸彦*; 西畑 保雄; 水木 純一郎; 新原 晧一*

Key Engineering Materials, 317-318, p.833 - 836, 2006/08



Isolated hydrogen center in wide gap semiconductors studied by $$mu$$SR

下村 浩一郎*; 門野 良典*; 西山 樟生*; 渡辺 功雄*; 鈴木 栄男*; Pratt, F.*; 大石 一城; 水田 正志*; 斎藤 峯雄*; Chow, K. H.*; et al.

Physica B; Condensed Matter, 376-377, p.444 - 446, 2006/04

 被引用回数:1 パーセンタイル:92.76(Physics, Condensed Matter)

Recent progresses of the studies of isolated hydrogen center in ZnO and GaN by muon spin rotation methods are reported. Preliminary experimental results for shallow muonium hunting as an acceptor in InSb and GaSb are also discussed.


LaFePdO$$_{3}$$ perovskite automotive catalyst having a self-regenerative function

田中 裕久*; 丹 功*; 上西 真里*; 谷口 昌司*; 木村 希夫*; 西畑 保雄; 水木 純一郎

Journal of Alloys and Compounds, 408-412, p.1071 - 1077, 2006/02

 被引用回数:46 パーセンタイル:10.05(Chemistry, Physical)


53 件中 1件目~20件目を表示