平原 徹*; Otrokov, M. M.*; 佐々木 泰佑*; 角田 一樹*; 友弘 雄太*; 日下 翔太郎*; 奥山 裕磨*; 一ノ倉 聖*; 小林 正起*; 竹田 幸治; et al.
Nature Communications (Internet), 11, p.4821_1 - 4821_8, 2020/09
We fabricate a novel magnetic topological heterostructure MnBiTe/BiTe where multiple magnetic layers are inserted into the topmost quintuple layer of the original topological insulator BiTe. A massive Dirac cone (DC) with a gap of 40-75 meV at 16 K is observed. By tracing the temperature evolution, this gap is shown to gradually decrease with increasing temperature and a blunt transition from a massive to a massless DC occurs around 200-250 K. Magnetic measurements show that there are two distinct Mn components in the system that corresponds to the two heterostructures; MnBiTe/BiTe is paramagnetic at 6 K while MnBiTe/BiTe is ferromagnetic with a negative hysteresis (critical temperature 20 K). This novel heterostructure is potentially important for future device applications.
吉川 智己*; Antonov, V. N.*; 河野 嵩*; 鹿子木 将明*; 角田 一樹; 宮本 幸治*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; 桜庭 裕弥*; et al.
Physical Review B, 102(6), p.064428_1 - 064428_7, 2020/08
X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) spectroscopy were applied at the Ge (Ga) edge to unravel the spin-resolved unoccupied electronic states of CoMnGe (Ga). Complicated spectral features were observed in both XAS and XMCD spectra. For their interpretation, we compared the experimental XAS and XMCD spectra with the calculated Ge (Ga) 4 and 4 orbital partial density of states. The comparison enabled a qualitative explanation of the XMCD spectra as the difference between the majority and minority-spin unoccupied density of states summed over the 4 and 4 orbitals. Our finding provides a new approach to uncover the spin-split partial density of states above the Fermi level.
河野 嵩*; 鹿子木 将明*; 吉川 智己*; Wang, X.*; 角田 一樹*; 宮本 幸治*; 室 隆桂之*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; et al.
Physical Review B, 100(16), p.165120_1 - 165120_6, 2019/10
Resonant photoelectron spectroscopy at the Co and Mn 2 core absorption edges of half-metallic CoMnGe has been performed to determine the element-specific density of states (DOS). A significant contribution of the Mn 3 partial DOS near the Fermi level () was clarified by measurement at the Mn 2 absorption edge. Further analysis by first-principles calculation revealed that it has symmetry, which must be responsible for the electrical conductivity along the line perpendicular to the film plane. The dominant normal Auger contribution observed at the Co 2 absorption edge indicates delocalization of photoexcited Co 3 electrons. The difference in the degrees of localization of the Mn 3 and Co 3 electrons in CoMnGe is explained by the first-principles calculation.
角田 一樹*; 鹿子木 将明*; Reimann, J.*; Nurmamat, M.*; 後藤 伸一*; 竹田 幸治; 斎藤 祐児; Kokh, K. A.*; Tereshchenko, O. E.*; Gdde, J.*; et al.
New Journal of Physics (Internet), 21(9), p.093006_1 - 093006_8, 2019/09
We systematically investigate the magnetic, structural and electronic properties and the ultrafast carrier dynamics in a series of V-doped SbTe samples of composition SbVTe with x = 0, 0.015 and 0.03. Element specific X-ray magnetic circular dichroism signifies that the ferromagnetism of V-doped SbTe is governed by the p-d hybridization between the host carrier and the magnetic dopant. Time- and angle-resolved photoemission spectroscopy has revealed that the V impurity induced states underlying the topological surface state (TSS) add scattering channels that significantly shorten the duration of transient surface electrons down to 100 fs scale. This is in a sharp contrast to the prolonged duration reported for pristine samples though the TSS is located inside the bulk energy gap of the host in either magnetic or non-magnetic cases. It implies the presence of a mobility gap in the bulk energy gap region of the host material.
Ye, M.*; Xu, T.*; Li, G.*; Qiao, S.*; 竹田 幸治; 斎藤 祐児; Zhu, S.-Y.*; Nurmamat, M.*; 角田 一樹*; 石田 行章*; et al.
Physical Review B, 99(14), p.144413_1 - 144413_7, 2019/04
We investigate the microscopic origin of ferromagnetism coupled with topological insulators in V-doped (Sb,Bi)Te employing X-ray magnetic circular dichroism and angle-resolved two-photon photoemission spectroscopies, combined with first-principles calculations. We found an magnetic moment at the Te site anti-parallel to that of the V and Sb sites, which plays a key role in the ferromagnetic order. We ascribe it to the hybridization between Te 5 and V 3 majority spin states at the Fermi energy, consistent with the Zener-type - exchange interaction scenario. The substitution of Bi for Sb suppresses the bulk ferromagnetism by introducing extra electron carriers in the majority spin channel of the Te states that compensates the antiparallel magnetic moment on the Te site. Our findings reveal important clues to designing magnetic topological insulators with higher Curie temperature that work under ambient conditions.
Ye, M.*; Li, W.*; Zhu, S.-Y.*; 竹田 幸治; 斎藤 祐児; Wang, J.*; Pan, H.*; Nurmamat, M.*; 角田 一樹*; Ji, F.*; et al.
Nature Communications (Internet), 6, p.8913_1 - 8913_7, 2015/11
角田 一樹*; 白井 開渡*; Zhu, S.-Y.*; 谷口 雅樹*; Ye, M.*; 上田 茂典*; 竹田 幸治; 斎藤 祐児; Aseguinolaza, I. R.*; Barandiarn, J. M.*; et al.
Physical Review B, 91(13), p.134417_1 - 134417_6, 2015/04
The temperature evolution of the electronic structure of a Ni-Fe(Co)-Ga/MgO(100), Heusler-type, ferromagnetic shape-memory alloy thin film has been followed by a bulk-sensitive hard X-ray photoelectron spectroscopy, element-selective soft X-ray magnetic circular dichroism, and first-principles calculation. The reversible changes of the electronic states near the Fermi energy show a hysteresis associated with the martensitic phase transition (MPT), where the pseudogap opens on cooling and closes again on warming. In addition, the Ni 3d spin magnetic moment increases by approximately two times across the MPT, whereas the change of Fe 3d moment is moderate. By comparing the experimental results with the calculated spin-resolved density of states, we conclude that the band Jahn-Teller effect of Ni 3d and Fe 3d orbitals is responsible for MPT.