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Element-specific density of states of Co$$_{2}$$MnGe revealed by resonant photoelectron spectroscopy

共鳴光電子分光で明らかにしたCo$$_{2}$$MnGeの元素選択的状態密度

河野 嵩*; 鹿子木 将明*; 吉川 智己*; Wang, X.*; 角田 一樹*; 宮本 幸治*; 室 隆桂之*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; 桜庭 裕弥*; 宝野 和博*; 木村 昭夫*

Kono, Takashi*; Kakoki, Masaaki*; Yoshikawa, Tomoki*; Wang, X.*; Sumida, Kazuki*; Miyamoto, Koji*; Muro, Takayuki*; Takeda, Yukiharu; Saito, Yuji; Goto, Kazuki*; Sakuraba, Yuya*; Hono, Kazuhiro*; Kimura, Akio*

Resonant photoelectron spectroscopy at the Co and Mn 2${it p}$ core absorption edges of half-metallic Co$$_{2}$$MnGe has been performed to determine the element-specific density of states (DOS). A significant contribution of the Mn 3${it d}$ partial DOS near the Fermi level ($$E_{F}$$) was clarified by measurement at the Mn 2${it p}$ absorption edge. Further analysis by first-principles calculation revealed that it has $$t_{2g}$$ symmetry, which must be responsible for the electrical conductivity along the line perpendicular to the film plane. The dominant normal Auger contribution observed at the Co 2${it p}$ absorption edge indicates delocalization of photoexcited Co 3${it d}$ electrons. The difference in the degrees of localization of the Mn 3${it d}$ and Co 3${it d}$ electrons in Co$$_{2}$$MnGe is explained by the first-principles calculation.

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