Minute SiC products synthesized from polyvinylsilane with radiation curing

放射線架橋を用いてポリビニルシランから合成される微小SiC成型体

出崎 亮; 杉本 雅樹; 田中 茂; 成澤 雅紀*; 岡村 清人*; 伊藤 正義*

Idesaki, Akira; Sugimoto, Masaki; Tanaka, Shigeru; Narisawa, Masaki*; Okamura, Kiyohito*; Ito, Masayoshi*

液体のケイ素系ポリマーであるポリビニルシラン(PVS)から放射線不融化を用いて微小なSiC成型体を合成した。PVSを、1辺または直径が50mで深さが10mである型枠に注入した。これに真空中室温で線を3.6MGy照射した後、Ar中1273Kで1時間焼成を行い、微小SiC成型体を合成した。得られたSiC成型体は型枠とほぼ相似形で、1辺または直径が約30mであった。

Minute SiC products were synthesized from polyvinylsilane (PVS), which is a liquid organosilicon polymer, with radiation curing. The PVS was injected into molds whose patterns were square and circle with 50m in side or diameter, and 10m in depth. The molds containing the PVS were irradiated by -ray with dose of 3.6MGy at room temperature in vacuum, and heat-treated at 1273K in Ar gas atmosphere. The obtained SiC products had shapes similar to those of the molds, and the sizes of the products were about 30m in side or diameter.