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Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

TIARAにおける重イオンを用いた可変エネルギーマイクロビームリソグラフによるナノ細線の創製

神谷 富裕; 高野 勝昌; 石井 保行; 佐藤 隆博; 及川 将一*; 大久保 猛; 芳賀 潤二*; 西川 宏之*; 古田 祐介*; 打矢 直之*; 関 修平*; 杉本 雅樹

Kamiya, Tomihiro; Takano, Katsuyoshi; Ishii, Yasuyuki; Sato, Takahiro; Oikawa, Masakazu*; Okubo, Takeru; Haga, Junji*; Nishikawa, Hiroyuki*; Furuta, Yusuke*; Uchiya, Naoyuki*; Seki, Shu*; Sugimoto, Masaki

In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, three-dimensional micro/nano structures with high aspect ratio based on cross linking process in negative resist such as SU-8 have been produced by a technique of mask less ion beam lithography. By bombarding high-energy heavy ions such as 450 MeV Xe$$^{23+}$$ to SU-8, a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment using a combination of 15 MeV Ni$$^{4+}$$ ion microbeam patterning and the 450 MeV $$^{129}$$Xe$$^{23+}$$ hitting on SU-8.

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パーセンタイル:56.05

分野:Instruments & Instrumentation

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