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Si$$_{1-x}$$Ge$$_{x}$$合金層における酸化誘起Ge濃縮過程; リアルタイム光電子分光による解明

Oxidation-enhanced condensation of Ge atoms on Si$$_{1-x}$$Ge$$_{x}$$ alloy layer studied by real-time photoelectron spectroscopy

小川 修一*; 穂積 英彬*; 吉越 章隆 ; 石塚 眞治*; 加賀 利瑛*; 寺岡 有殿; 高桑 雄二*

Ogawa, Shuichi*; Hozumi, Hideaki*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Kaga, Toshiteru*; Teraoka, Yuden; Takakuwa, Yuji*

Si$$_{1-x}$$Ge$$_{x}$$合金層の酸化によって加速されるGe原子の濃縮速度について、放射光を用いたリアルタイム光電子分光によって調べた。Si$$_{1-x}$$Ge$$_{x}$$合金層はp型Si(001)基板上にGe蒸着で形成し、その合金層をラングミュア型吸着条件で酸化した。773Kでの酸化ではGe原子は酸化されず、SiO$$_{2}$$層のみがSi$$_{1-x}$$Ge$$_{x}$$合金層上に形成された。さらに、GeO分子の脱離は起こらなかった。一方で、室温ではSi原子ばかりでなくGe原子も酸化された。この違いは点欠陥発生を伴う統合酸化モデルで説明できる。すなわち、773Kでは多くの欠陥がSi$$_{1-x}$$Ge$$_{x}$$合金層の酸化中に発生し、Ge原子がこれらの欠陥を通して拡散すると示唆される。

The oxidation-enhanced Ge atoms condensation kinetics on an Si$$_{1-x}$$Ge$$_{x}$$ alloy layer has been investigated by the real-time photoemission spectroscopy using the synchrotron radiation. The Si$$_{1-x}$$Ge$$_{x}$$ alloy layer was formed with a thermal evaporation method on a p-type Si(001) surface, and this alloy layer was oxidized at Langmuir-type adsorption. During oxidation at 773 KC, it is found that the Ge atoms are not oxidized, only SiO$$_{2}$$ film is formed on the Si$$_{1-x}$$Ge$$_{x}$$ alloy layer. Furthermore, the desorption of GeO molecules does not occur during the oxidation of alloy layer. On the other hand, not only Si atoms but also Ge atoms are oxidized at room temperature. This difference can be explained using the unified oxidation model mediated by the point defect generation, namely it is suggested that a lot of vacancies are generated during oxidation of the Si$$_{1-x}$$Ge$$_{x}$$ alloy layer at 773K and Ge atoms diffuse through these vacancies.

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