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Electronic structures of U$$X_3$$ ($$X$$=Al, Ga, and In) studied by photoelectron spectroscopy

光電子分光によるU$$X_3$$ ($$X$$=Al, Ga, and In)の電子状態

藤森 伸一; 小畠 雅明; 竹田 幸治; 岡根 哲夫; 斎藤 祐児; 藤森 淳; 山上 浩志; 芳賀 芳範; 山本 悦嗣; 大貫 惇睦*

Fujimori, Shinichi; Kobata, Masaaki; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi; Yamagami, Hiroshi; Haga, Yoshinori; Yamamoto, Etsuji; Onuki, Yoshichika*

The electronic structures of U$$X_3$$ ($$X$$=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the the relationship between their electronic structure and magnetic properties. The band structures and Fermi surfaces of UAl$$_3$$ and UGa$$_3$$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band structure calculations. The topologies of the Fermi surfaces and the band structures of UAl$$_3$$ and UGa$$_3$$ were explained reasonably well by the calculation, although bands near the Fermi level ($$E_mathrm{F}$$) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl$$_3$$ and UGa$$_3$$ are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their magnetism.

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パーセンタイル:66.33

分野:Materials Science, Multidisciplinary

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