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Synthesis of a minute SiC product from polyvinylsilane with radiation curing, 1; Radiation curing of polyvinylsilane

放射線架橋を利用したポリビニルシランからのSiC微小成型体の合成,1; ポリビニルシランの放射線架橋

出崎 亮; 杉本 雅樹; 田中 茂; 成澤 雅紀*; 岡村 清人*; 伊藤 正義*

Idesaki, Akira; Sugimoto, Masaki; Tanaka, Shigeru; Narisawa, Masaki*; Okamura, Kiyohito*; Ito, Masayoshi*

液体のケイ素系ポリマーであるポリビニルシラン(PVS)について$$gamma$$線照射効果を調べ、放射線架橋を利用してSiC微小成型体を作製するための最適な架橋条件を検討した。照射温度として室温と液体窒素温度(77K)を検討した。両者の場合において、真空中、$$gamma$$線を3-4MGy以上照射することにより、室温で固体状であり、かつ成型された形状を維持したままPVSを架橋させることが可能であることを明らかにした。室温での照射の方がPVSの架橋効率が高いことを明らかにした。型枠に注入したPVSに真空中、室温で$$gamma$$線を3.6MGy照射し、その後Ar中1273Kで焼成することにより、型枠と相似形であり、30-60$$mu$$mの大きさのSiC微小成型体を得ることができた。

Irradiation effect of $$gamma$$-ray on polyvinylsilane (PVS), which is a liquid organosilicon polymer, was investigated and the optimum curing condition to synthesize a minute SiC product with radiation curing was discussed. Room temperature and liquid nitrogen temperature (77K) were examined as the irradiation temperature. In both cases, the cured PVS maintaining its formed shape could be obtained by $$gamma$$-ray irradiation under vacuum, and the cured PVS in solid state at room temperature was obtained by irradiation with dose of above 3-4MGy. It was found that the efficiency of crosslinking in case of the irradiation at room temperature is higher than that in case of irradiation at 77K. The PVS injected into a mold was irradiated by $$gamma$$-ray with dose of 3.6MGy at room temperature under vacuum, and pyrolyzed at 1273 K in Ar gas atmosphere. As a result, minute SiC products which had similar shapes to the mold and the sizes of 30-60$$mu$$m were obtained.

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パーセンタイル:29.02

分野:Materials Science, Multidisciplinary

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